- Article
SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect
- Ling Sang,
- Rui Jin,
- Jiawei Cui,
- Xiping Niu,
- Zheyang Li,
- Junjie Yang,
- Muqin Nuo,
- Meng Zhang,
- Maojun Wang and
- Jin Wei
A SiC fin-channel MOSFET structure (Fin-MOS) is proposed for an enhanced gate shielding effect. The gates are placed on each side of the narrow fin-channel region, while grounded p-shield regions below the gates provide a strong shielding effect. The...