- Article
Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion
- Héctor Sarnago,
- Óscar Lucía,
- Iulian O. Popa and
- José M. Burdío
New semiconductor technology is enabling the design of more reliable and high-performance power converters. In particular, wide bandgap (WBG) silicon carbide (SiC) and gallium nitride (GaN) technologies provide faster switching times, higher operatin...