- Article
Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films
- F. V. Grigoriev,
- V. B. Sulimov and
- A. V. Tikhonravov
A systematic study of the most significant parameters of the ion-assisted deposited silicon dioxide films is carried out using the classical molecular dynamics method. The energy of the deposited silicon and oxygen atoms corresponds to the thermal ev...