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The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

1
School of Space Science and Physics, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209, China
2
Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan
3
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
4
Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
5
Institute of Materials Science and Engineering, Ocean University of China, 238 Songling Road, Qingdao 266100, China
*
Author to whom correspondence should be addressed.
Coatings 2018, 8(5), 168; https://doi.org/10.3390/coatings8050168
Received: 26 March 2018 / Revised: 20 April 2018 / Accepted: 25 April 2018 / Published: 30 April 2018
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Abstract

In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films’ conductivity improves from 9.1 to 25.4 S·cm−1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films’ carrier concentrations. In addition, with an increasing oxygen flow ratio, the film’s transmittance degrades. The direct optical band gap of Ni1−xO films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%. View Full-Text
Keywords: NiO thin films; optoelectronic properties; oxygen flow ratio; ion source assisted sputtering; p-type conduction NiO thin films; optoelectronic properties; oxygen flow ratio; ion source assisted sputtering; p-type conduction
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Sun, H.; Chen, S.-C.; Peng, W.-C.; Wen, C.-K.; Wang, X.; Chuang, T.-H. The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering. Coatings 2018, 8, 168.

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