239 Results Found

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we re...

Borophene, a revolutionary two-dimensional (2D) material with exceptional electrical, physical, and chemical properties, holds great promise for high-performance, highly integrated information storage systems. However, its metallic nature and structu...

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the tradi...

With the development of artificial intelligence and edge computing, the demand for high-performance non-volatile memory devices has been rapidly increasing. Two-dimensional materials have ultrathin bodies, ultra-flattened surfaces, and superior physi...

As the CMOS technology approaches its physical and economic limits, further advancement of Moore’s Law for enhanced computing performance can no longer rely solely on smaller transistors and higher integration density. Instead, the computing la...

In this study, we investigate the synaptic characteristics and the non-volatile memory characteristics of TiN/CeOx/Pt RRAM devices for a neuromorphic system. The thickness and chemical properties of the CeOx are confirmed through TEM, EDS, and XPS an...

A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-Fe2O3/FTO memory device with the nonvolatile resistive switching behavior...

In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavio...

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossov...

Herein we report on a facile sol-gel spin-coating technique to fabricate ZnO thin films that grow preferentially along the (002) plane on FTO substrates. By employing the magnetron sputtering technique to deposit a tungsten (W) top metal electrode on...

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and...

Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices...

While non-volatile memories (NVMs) provide high-density and low-leakage, they also have low write-endurance. This, along with the write-variation introduced by the cache management policies, can lead to very small cache lifetime. In this paper, we pr...

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random...

We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel lay...

2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterize...

Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal....

Research on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices. The advent of these low-compromise n...

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, P...

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the cor...

This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent...

In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and t...

The design of an efficient memory subsystem is a fundamentally challenging task in the design of electronic equipment. The storage hierarchy chosen for a particular design has a significant impact on the overall performance and cost. Flash memory oft...

In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticate...

Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of...

Recent progress in the development of artificial intelligence technologies, aided by deep learning algorithms, has led to an unprecedented revolution in neuromorphic circuits, bringing us ever closer to brain-like computers. However, the vast majorit...

Maintaining power consumption has become a critical hurdle in the manufacturing process as CMOS technologies continue to be downscaled. The longevity of portable gadgets is reduced as power usage increases. As a result, less-cost, high-density, less-...

Here, we present the synaptic characteristics of AlN-based conductive bridge random access memory (CBRAM) as a synaptic device for neuromorphic systems. Both non-volatile and volatile memory are observed by simply controlling the strength of the Cu f...

As a new type of nonvolatile device, the memristor has become one of the most promising technologies for designing a new generation of high-density memory. In this paper, a 4-bit high-density nonvolatile memory based on a memristor is designed and ap...

In this study, we present the resistive switching characteristics and the emulation of a biological synapse using the ITO/IGZO/TaN device. The device demonstrates efficient energy consumption, featuring low current resistive switching with minimal se...

Ferroelectric domain wall conductance is a rapidly growing field. Thin-film lithium niobate, as in lithium niobate on insulators (LNOI), appears to be an ideal template, which is tuned by the inclination of the domain wall. Thus, the precise tuning o...

The rapid expansion of data has made global access easier, but it also demands increasing amounts of energy for data storage and processing. In response, neuromorphic electronics, inspired by the functionality of biological neurons and synapses, have...

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio...

In the pursuit of advanced non-volatile memory technologies, ferroelectric memristors have attracted great attention. However, traditional perovskite ferroelectric materials are hampered by environmental pollution, limited applicability, and the comp...

During the recent decades, non-volatile memory (NVM) has been anticipated to scale up the main memory size, improve the performance of applications, and reduce the speed gap between main memory and storage devices, while supporting persistent storage...

Memristors are promising candidates for next-generation non-volatile memory devices, offering low power consumption and high-speed switching capabilities. However, conventional metal oxide-based memristors are constrained by fabrication complexity an...

Memory devices based on floating-gate transistor have recently become dominant technology for non-volatile storage devices like USB flash drives, memory cards, solid-state disks, etc. In contrast to many communication channels, the errors observed in...

Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to...

In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film’s resistive random access memory (RRAM) devices for using different top electrode materials were observed and disc...

We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger...

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and com...

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed,...

Non-volatile memories based on phase-change materials have gained ground for applications in analog in-memory computing. Nonetheless, non-idealities inherent to the material result in device resistance variations that impair the achievable numerical...

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very pr...

Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-sca...

As one of the solutions to overcome the current problems of computing systems, a resistive switching device, the TiN/TaOx/fluorine-doped tin oxide (FTO) stacked device, was fabricated to investigate its capability in embodying neuromorphic computing....

Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle th...

Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirem...

The production and optimization of HfAlO-based charge trapping memory devices is central to our research. Current optimization methods, based largely on experimental experience, are tedious and time-consuming. We examine various fabrication parameter...

Computing-in-memory (CIM) with emerging non-volatile resistive memory devices has demonstrated remarkable performance in data-intensive applications, such as neural networks and machine learning. A crosspoint memory array enables naturally parallel c...