Next Article in Journal
Mineralogical Crystallography
Previous Article in Journal
Fixed-Target Serial Synchrotron Crystallography Using Nylon Mesh and Enclosed Film-Based Sample Holder
Previous Article in Special Issue
Recent Progress in Lithium Niobate
Article

Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films

1
Institute of Applied Physics, TU Dresden, 01069 Dresden, Germany
2
Center Nanoelectronic Technologies, Fraunhofer IPMS, 01099 Dresden, Germany
3
Department of Materials Science and Engineering, and Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA
*
Authors to whom correspondence should be addressed.
Crystals 2020, 10(9), 804; https://doi.org/10.3390/cryst10090804
Received: 1 January 2020 / Revised: 7 May 2020 / Accepted: 26 May 2020 / Published: 11 September 2020
(This article belongs to the Special Issue Recent Progress in Lithium Niobate)
Ferroelectric domain wall conductance is a rapidly growing field. Thin-film lithium niobate, as in lithium niobate on insulators (LNOI), appears to be an ideal template, which is tuned by the inclination of the domain wall. Thus, the precise tuning of domain wall inclination with the applied voltage can be used in non-volatile memories, which store more than binary information. In this study, we present the realization of this concept for non-volatile memories. We obtain remarkably stable set voltages by the ferroelectric nature of the device as well as a very large increase in the conduction, by at least five orders of magnitude at room temperature. Furthermore, the device conductance can be reproducibly tuned over at least two orders of magnitude. The observed domain wall (DW) conductance tunability by the applied voltage can be correlated with phase-field simulated DW inclination evolution upon poling. Furthermore, evidence for polaron-based conduction is given. View Full-Text
Keywords: conducting domain walls; ferroelectric films; lithium niobate; lithium niobate-on-insulator; scanning probe microscopy; non-volatile memory conducting domain walls; ferroelectric films; lithium niobate; lithium niobate-on-insulator; scanning probe microscopy; non-volatile memory
Show Figures

Graphical abstract

MDPI and ACS Style

Kämpfe, T.; Wang, B.; Haußmann, A.; Chen, L.-Q.; Eng, L.M. Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films. Crystals 2020, 10, 804. https://doi.org/10.3390/cryst10090804

AMA Style

Kämpfe T, Wang B, Haußmann A, Chen L-Q, Eng LM. Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films. Crystals. 2020; 10(9):804. https://doi.org/10.3390/cryst10090804

Chicago/Turabian Style

Kämpfe, Thomas, Bo Wang, Alexander Haußmann, Long-Qing Chen, and Lukas M. Eng 2020. "Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films" Crystals 10, no. 9: 804. https://doi.org/10.3390/cryst10090804

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop