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Open AccessArticle

Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Department of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea
3
Department of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, Korea
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(9), 947; https://doi.org/10.3390/electronics8090947
Received: 22 July 2019 / Revised: 22 August 2019 / Accepted: 26 August 2019 / Published: 28 August 2019
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation. View Full-Text
Keywords: sol–gel; ZrO2; resistive random-access memory; annealing environment sol–gel; ZrO2; resistive random-access memory; annealing environment
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Ha, S.; Lee, H.; Lee, W.-Y.; Jang, B.; Kwon, H.-J.; Kim, K.; Jang, J. Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM. Electronics 2019, 8, 947.

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