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Open AccessArticle

Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM

School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
Department of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea
Department of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, Korea
Author to whom correspondence should be addressed.
Electronics 2019, 8(9), 947;
Received: 22 July 2019 / Revised: 22 August 2019 / Accepted: 26 August 2019 / Published: 28 August 2019
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation. View Full-Text
Keywords: sol–gel; ZrO2; resistive random-access memory; annealing environment sol–gel; ZrO2; resistive random-access memory; annealing environment
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Ha, S.; Lee, H.; Lee, W.-Y.; Jang, B.; Kwon, H.-J.; Kim, K.; Jang, J. Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM. Electronics 2019, 8, 947.

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