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Open AccessArticle

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

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Institut Matériaux Microélectronique Nanosciences de Provence(IM2NP), Aix-Marseille Université, Centre national de la recherche scientifique (CNRS), UMR 7334, 13284 Marseille, France
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Institut d'Électronique Fondamentale(IEF), University of Paris-Sud, Centre national de la recherche scientifique (CNRS), UMR 8622, F91405 Orsay, France
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Commissariat l'Énergie Atomique - Laboratoire d'Électronique et de Technologie de lInformation (CEA-Léti), 38054 Grenoble, France
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Author to whom correspondence should be addressed.
J. Low Power Electron. Appl. 2014, 4(1), 1-14; https://doi.org/10.3390/jlpea4010001
Received: 25 October 2013 / Revised: 6 December 2013 / Accepted: 9 December 2013 / Published: 9 January 2014
(This article belongs to the Special Issue Selected Papers from FTFC 2013 Conference)
Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. View Full-Text
Keywords: compact modeling; RRAM; OxRAM; design compact modeling; RRAM; OxRAM; design
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Bocquet, M.; Aziza, H.; Zhao, W.; Zhang, Y.; Onkaraiah, S.; Muller, C.; Reyboz, M.; Deleruyelle, D.; Clermidy, F.; Portal, J.-M. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). J. Low Power Electron. Appl. 2014, 4, 1-14.

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