Journal Description
Chips
Chips
is an international, peer-reviewed, open access journal on all aspects of chips published quarterly online by MDPI.
- Open Access— free for readers, with article processing charges (APC) paid by authors or their institutions.
- Rapid Publication: first decisions in 16 days; acceptance to publication in 5.8 days (median values for MDPI journals in the first half of 2024).
- Recognition of Reviewers: APC discount vouchers, optional signed peer review and reviewer names are published annually in the journal.
- Companion journal: Sensors.
Latest Articles
Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications
Chips 2024, 3(3), 235-257; https://doi.org/10.3390/chips3030012 - 6 Sep 2024
Abstract
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering.
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Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. We discuss the recent research progress on controlling oxygen vacancy concentration in metal oxide thin films and its impact on their resistive switching properties for application in electronic memory and neuromorphic computing devices.
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(This article belongs to the Special Issue New Advances in Memristors: Design and Applications)
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Open AccessBrief Report
A Prediction about Radio Frequency Envelope Detectors for Implementing a 2.4 GHz Rectenna for IEEE 802.15.4 with MOS Transistors
by
Leonardo Barboni
Chips 2024, 3(3), 229-234; https://doi.org/10.3390/chips3030011 - 5 Aug 2024
Abstract
This study introduces a rectenna, functioning as an RF envelope detector, utilizing a 16 nm bulk MOS transistor (metal-oxide-semiconductor field-effect transistor) for nonlinear detection. A circuit architecture is presented alongside a detailed design methodology and simulations. The detector efficiently demodulates a 2.4 GHz
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This study introduces a rectenna, functioning as an RF envelope detector, utilizing a 16 nm bulk MOS transistor (metal-oxide-semiconductor field-effect transistor) for nonlinear detection. A circuit architecture is presented alongside a detailed design methodology and simulations. The detector efficiently demodulates a 2.4 GHz OOK (On/Off Keying) encoded signal, comprising a 32-bit word, within 320 μs. Remarkably, the circuit operates passively, requiring no voltage supply or bias current, and functions effectively with dBm input power at the antenna. This capability enables the decoding of 32-bit unsigned integer radio packets as a wakeup radio event. The effectiveness of the envelope detector is substantiated through comprehensive simulations.
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(This article belongs to the Special Issue IC Design Techniques for Power/Energy-Constrained Applications)
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Open AccessArticle
Power Consumption Efficiency of Encryption Schemes for RFID
by
Mario Gazziro and João Paulo Carmo
Chips 2024, 3(3), 216-228; https://doi.org/10.3390/chips3030010 - 2 Jul 2024
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This paper provides a comparative analysis of AES (Advanced Encryption Standard) and Salsa20 algorithm implementations, focusing on power consumption efficiency in passive RFID (radio-frequency identification) tags and ultra-low-power devices. The main objective of this work is to determine which of these algorithms is
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This paper provides a comparative analysis of AES (Advanced Encryption Standard) and Salsa20 algorithm implementations, focusing on power consumption efficiency in passive RFID (radio-frequency identification) tags and ultra-low-power devices. The main objective of this work is to determine which of these algorithms is more suitable to operate in these types of devices. For this purpose, ASIC (application-specific integrated circuit) implementations of AES and Salsa20 based on low-power approaches were developed and their power consumption was evaluated. The results demonstrate that Salsa20 power consumption is lower than AES (about 17%), indicating that Salsa20 is a much better choice than AES for passive RFID tags.
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Open AccessArticle
Survey of Security Issues in Memristor-Based Machine Learning Accelerators for RF Analysis
by
Will Lillis, Max Cohen Hoffing and Wayne Burleson
Chips 2024, 3(2), 196-215; https://doi.org/10.3390/chips3020009 - 13 Jun 2024
Abstract
We explore security aspects of a new computing paradigm that combines novel memristors and traditional Complimentary Metal Oxide Semiconductor (CMOS) to construct a highly efficient analog and/or digital fabric that is especially well-suited to Machine Learning (ML) inference processors for Radio Frequency (RF)
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We explore security aspects of a new computing paradigm that combines novel memristors and traditional Complimentary Metal Oxide Semiconductor (CMOS) to construct a highly efficient analog and/or digital fabric that is especially well-suited to Machine Learning (ML) inference processors for Radio Frequency (RF) signals. Analog and/or hybrid hardware designed for such application areas follows different constraints from that of traditional CMOS. This paradigm shift allows for enhanced capabilities but also introduces novel attack surfaces. Memristors have different properties than traditional CMOS which can potentially be exploited by attackers. In addition, the mixed signal approximate computing model has different vulnerabilities than traditional digital implementations. However both the memristor and the ML computation can be leveraged to create security mechanisms and countermeasures ranging from lightweight cryptography, identifiers (e.g., Physically Unclonable Functions (PUFs), fingerprints, and watermarks), entropy sources, hardware obfuscation and leakage/attack detection methods. Three different threat models are proposed: (1) Supply Chain, (2) Physical Attacks, and (3) Remote Attacks. For each threat model, potential vulnerabilities and defenses are identified. This survey reviews a variety of recent work from the hardware and ML security literature and proposes open problems for both attack and defense. The survey emphasizes the growing area of RF signal analysis and identification in terms of commercial space, as well as military applications and threat models. We differ from other recent surveys that target ML, in general, neglecting RF applications.
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(This article belongs to the Topic Advances in Microelectronics and Semiconductor Engineering)
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Open AccessArticle
Directed Acyclic Graph-Based Datapath Synthesis Using Graph Isomorphism and Gate Reconfiguration
by
Liuting Shang, Sheng Lu, Yichen Zhang, Sungyong Jung and Chenyun Pan
Chips 2024, 3(2), 182-195; https://doi.org/10.3390/chips3020008 - 4 Jun 2024
Abstract
Datapath synthesis is a crucial step in synthesis flow and aims at globally minimizing an area by identifying shareable logic structures. This paper introduces a novel Directed Acyclic Graph (DAG)-based datapath synthesis method based on graph isomorphism and gate reconfiguration. Unlike algorithms that
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Datapath synthesis is a crucial step in synthesis flow and aims at globally minimizing an area by identifying shareable logic structures. This paper introduces a novel Directed Acyclic Graph (DAG)-based datapath synthesis method based on graph isomorphism and gate reconfiguration. Unlike algorithms that identify common specification logic, our approach simplifies the problem by focusing on searching for common topology. Leveraging the concept of gate reconfiguration, our algorithm extends the applicability of DAG-based datapath synthesis by transforming a topology-equivalent network into a specification-equivalent network. Experimental results demonstrate up to 23.6% improvement when optimizing the adder–subtractor circuit, a scenario not addressed by existing DAG-based datapath synthesis algorithms.
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(This article belongs to the Topic Advances in Microelectronics and Semiconductor Engineering)
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Open AccessReview
A Review on Fundamentals of Noise-Shaping SAR ADCs and Design Considerations
by
Victor H. Arzate-Palma, David G. Rivera-Orozco, Gerardo Molina Salgado and Federico Sandoval-Ibarra
Chips 2024, 3(2), 153-181; https://doi.org/10.3390/chips3020007 - 10 May 2024
Abstract
A general overview of Noise-Shaping Successive Approximation Register (SAR) analog-to-digital converters is provided, encompassing the fundamentals, operational principles, and key architectures of Noise-Shaping SAR (NS SAR). Key challenges, including inherent errors in processing circuits, are examined, along with current advancements in architecture design.
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A general overview of Noise-Shaping Successive Approximation Register (SAR) analog-to-digital converters is provided, encompassing the fundamentals, operational principles, and key architectures of Noise-Shaping SAR (NS SAR). Key challenges, including inherent errors in processing circuits, are examined, along with current advancements in architecture design. Various issues, such as loop filter optimization, implementation methods, and DAC network element mismatches, are explored, along with considerations for voltage converter performance. The design of dynamic comparators is examined, highlighting their critical role in the SAR ADC architecture. Various architectures of dynamic comparators are extensively explored, including optimization techniques, performance considerations, and emerging trends. Finally, emerging trends and future challenges in the field are discussed.
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(This article belongs to the Topic Advances in Microelectronics and Semiconductor Engineering)
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Open AccessArticle
A CMOS 12-Bit 3MS/s Rad-Hard Digital-to-Analog Converter Based on a High-Linearity Resistor String Poly-Matrix
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Cristiano Calligaro and Umberto Gatti
Chips 2024, 3(2), 129-152; https://doi.org/10.3390/chips3020006 - 8 May 2024
Abstract
This work presents a rad-hard 12-bit 3 MS/s resistor string DAC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels starting from a conventional topology. The design considers the different effects of the radiation that
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This work presents a rad-hard 12-bit 3 MS/s resistor string DAC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels starting from a conventional topology. The design considers the different effects of the radiation that could damage the circuits in space environments. The DAC has been developed and integrated a standard CMOS 0.13 μm technology by IHP, using RHBD techniques. Low Earth Orbit (LEO) requires a TID value of around 100 krad (Si), according to the expected length of the mission. The temperature range is between −55 °C and 125 °C. The DAC power budget is similar to that of terrestrial applications. The measured INL (Integral Non-Linearity) and DNL (Differential Non-Linearity) are better than 0.2 LSB, while the ENOB (Effective Number Of Bits) at a 3 MS/s clock exceeds 9.7 bits while loading a 10 pF capacitor. The DAC has been characterized under radiation, showing a fluctuation in the analog output lower than 2 LSB (mainly due to measurement uncertainty) up to 500 krad (Si). Power consumption shows a negligible increase, too. A 10-bit version of the same DAC as the downscaled 12-bit one has been developed as well.
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(This article belongs to the Topic Advances in Microelectronics and Semiconductor Engineering)
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Open AccessReview
Slew-Rate Enhancement Techniques for Switched-Capacitors Fast-Settling Amplifiers: A Review
by
Michele Dei, Francesco Gagliardi and Paolo Bruschi
Chips 2024, 3(2), 98-128; https://doi.org/10.3390/chips3020005 - 17 Apr 2024
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This review is aimed at the integrated circuit design community and it explores slew-rate enhancement techniques for switched-capacitor amplifiers, with a primary focus on optimizing settling time within power constraints. Key challenges are addressed, including the selection between single-stage and two-stage amplifiers, along
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This review is aimed at the integrated circuit design community and it explores slew-rate enhancement techniques for switched-capacitor amplifiers, with a primary focus on optimizing settling time within power constraints. Key challenges are addressed, including the selection between single-stage and two-stage amplifiers, along with the utilization of advanced circuit-level techniques for slew-rate enhancement. Presently, there exists a gap in comprehensive discussion, with reliance primarily on two Figures of Merit aimed at assessing power efficiency under specific capacitive loads. However, these metrics fail to adequately assess the performance of the existing slew-rate enhancer solutions at different values of capacitive loads. As a consequence, the designer lacks clear guidelines in practical situations. This review provides a state-of-the art mapping under a figure of merit dedicated to assess the whole settling delay, and also introduces a novel performance metric which highlights the role of the circuital architectures, regardless of external operating conditions. By offering a thorough examination, this review seeks to steer future research in switched-capacitor amplifier design, thereby facilitating informed decision-making and fostering innovation in the field.
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Open AccessArticle
Using the LabVIEW Simulation Program to Design and Determine the Characteristics of Amplifiers
by
Corina Cuntan, Caius Panoiu, Manuela Panoiu, Ioan Baciu and Sergiu Mezinescu
Chips 2024, 3(2), 69-97; https://doi.org/10.3390/chips3020004 - 1 Apr 2024
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Because of the large number of parameters that interact in amplifier functions, determining dynamic regime parameters as well as the mode of function of amplifier stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an
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Because of the large number of parameters that interact in amplifier functions, determining dynamic regime parameters as well as the mode of function of amplifier stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an amplifier in various connections. The user selects the generator’s parameters, the type of connection and its parameters, as well as the load circuit characteristics. The application can determine both the stage characteristics and the Bode characteristics. The amplifier’s stability zone, as well as its gain and phase, are determined based on these characteristics. An important advantage of this application is that the design of the amplifier stage can be created starting from some parameters that the amplifier can establish, from which the values of components can be determined. In order to validate the simulation results from the LabVIEW application, the specialized program Multisim was used, as well as experimental measurements using the Electronics Explorer Board. Both Multisim and Electronics Explorer Board can determine Bode characteristics. In both simulations and experimental amplifiers, the same schemes with the same transistor were used. The application can be used for educational purposes as well as to design an amplifier’s stage to achieve specific parameters.
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Open AccessArticle
High-Efficiency Reconfigurable CMOS RF-to-DC Converter System for Ultra-Low-Power Wireless Sensor Nodes with Efficient MPPT Circuitry
by
Roberto La Rosa, Danilo Demarchi, Sandro Carrara and Catherine Dehollain
Chips 2024, 3(1), 49-68; https://doi.org/10.3390/chips3010003 - 12 Mar 2024
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This paper presents a novel CMOS RF-to-DC converter for ultra-low-power wireless sensor nodes powered by RF wireless power transfer. The proposed converter achieves 10% higher power conversion efficiency than a conventional rectifier, with only a 1% increase in power consumption. The system employs
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This paper presents a novel CMOS RF-to-DC converter for ultra-low-power wireless sensor nodes powered by RF wireless power transfer. The proposed converter achieves 10% higher power conversion efficiency than a conventional rectifier, with only a 1% increase in power consumption. The system employs a reconfigurable Dickson topology, operates on the unlicensed 868 MHz ISM band, and includes a built-in power-efficient MPPT system architecture. Experimental measurements show a maximum power conversion efficiency of 55% in the power range from −22 dBm to 0 dBm, with a power sensitivity of −22 dBm for a DC output voltage of 2.4 V. The proposed converter offers a promising solution for efficient wireless power transfer and energy harvesting in ultra-low-power wireless sensor nodes.
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Open AccessArticle
Real-Time Compact Digital Processing Chain for the Detection and Sorting of Neural Spikes from Implanted Microelectrode Arrays
by
Andrea Vittimberga, Riccardo Corelli and Giuseppe Scotti
Chips 2024, 3(1), 32-48; https://doi.org/10.3390/chips3010002 - 8 Feb 2024
Abstract
Implantable microelectrodes arrays are used to record electrical signals from surrounding neurons and have led to incredible improvements in modern neuroscience research. Digital signals resulting from conditioning and the analog-to-digital conversion of neural spikes captured by microelectrodes arrays have to be elaborated in
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Implantable microelectrodes arrays are used to record electrical signals from surrounding neurons and have led to incredible improvements in modern neuroscience research. Digital signals resulting from conditioning and the analog-to-digital conversion of neural spikes captured by microelectrodes arrays have to be elaborated in a dedicated DSP core devoted to a real-time spike-sorting process for the classification phase based on the source neurons from which they were emitted. On-chip spike-sorting is also essential to achieve enough data reduction to allow for wireless transmission within the power constraints imposed on implantable devices. The design of such integrated circuits must meet stringent constraints related to ultra-low power density and the minimum silicon area, as well as several application requirements. The aim of this work is to present real-time hardware architecture able to perform all the spike-sorting tasks on chip while satisfying the aforementioned stringent requirements related to this type of application. The proposed solution has been coded in VHDL language and simulated in the Cadence Xcelium tool to verify the functional behavior of the digital processing chain. Then, a synthesis and place and route flow has been carried out to implement the proposed architecture in both a 130 nm and a FD-SOI 28 nm CMOS process, with a 200 MHz clock frequency target. Post-layout simulations in the Cadence Xcelium tool confirmed the proper operation up to a 200 MHz clock frequency. The area occupation and power consumption of the proposed detection and clustering module are 0.2659 mm2/ch, 7.16 μW/ch, 0.0168 mm2/ch, and 0.47 μW/ch for the 130 nm and 28 nm implementation, respectively.
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(This article belongs to the Topic Applied System on Biomedical Engineering, Healthcare and Sustainability 2023)
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Open AccessArticle
A 0.5-V Four-Stage Amplifier Using Cross-Feedforward Positive Feedback Frequency Compensation
by
Feifan Gao and Pak Kwong Chan
Chips 2024, 3(1), 1-31; https://doi.org/10.3390/chips3010001 - 30 Dec 2023
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This paper presents a low-voltage CMOS four-stage amplifier operating in the subthreshold region. The first design technique includes the cross-feedforward positive feedback frequency compensation (CFPFC) for obtaining better bandwidth efficiency in a low-voltage multi-stage amplifier. The second design technique incorporates both the bulk-drain-driven
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This paper presents a low-voltage CMOS four-stage amplifier operating in the subthreshold region. The first design technique includes the cross-feedforward positive feedback frequency compensation (CFPFC) for obtaining better bandwidth efficiency in a low-voltage multi-stage amplifier. The second design technique incorporates both the bulk-drain-driven input stage topology in conjunction with a low-voltage attenuator to permit operation at a low voltage, and improves the input common-mode range (ICMR). The proposed circuit is implemented using TSMC-40 nm process technology. It consumes 0.866 μW at a supply voltage of 0.5 V. With a capacitive load of 50 pF, this four-stage amplifier can achieve 84.59 dB in gain, 161.00 kHz in unity-gain bandwidth, 96 deg in phase margin, and 5.7 dB in gain margin whilst offering an input-referred noise of 213.63 @1 kHz, small-signal power-bandwidth FoMss of 9.31 (MHz∙pF/μW), and noise-power per bandwidth-based FoMnpb of 1.15 × 10−6 (( )·µW/Hz). Compared to the conventional bulk-driven input stage design technique, it offers improved multi-parameter performance metrics in terms of noise, power, and bandwidth at a compromising tradeoff on ICMR with respect to bulk-driven amplifier design. Compared with conventional gate-source input stage design, it offers improved ICMR. The amplifier is useful for low-voltage analog signal-processing applications.
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Open AccessReview
Winner-Take-All and Loser-Take-All Circuits: Architectures, Applications and Analytical Comparison
by
Ehsan Rahiminejad and Hamed Aminzadeh
Chips 2023, 2(4), 262-278; https://doi.org/10.3390/chips2040016 - 8 Nov 2023
Abstract
Different winner-take-all (WTA) and loser-take-all (LTA) circuits are studied, and their operations are analyzed in this review. The exclusive operation of the current conveyor, binary tree, and time-domain WTA/LTA architectures, as the most important architectures reported in the literature, are compared from the
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Different winner-take-all (WTA) and loser-take-all (LTA) circuits are studied, and their operations are analyzed in this review. The exclusive operation of the current conveyor, binary tree, and time-domain WTA/LTA architectures, as the most important architectures reported in the literature, are compared from the perspectives of power consumption, speed, and precision.
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(This article belongs to the Special Issue State-of-the-Art in Integrated Circuit Design)
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Open AccessArticle
A Survey of Automotive Radar and Lidar Signal Processing and Architectures
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Luigi Giuffrida, Guido Masera and Maurizio Martina
Chips 2023, 2(4), 243-261; https://doi.org/10.3390/chips2040015 - 8 Oct 2023
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In recent years, the development of Advanced Driver-Assistance Systems (ADASs) is driving the need for more reliable and precise on-vehicle sensing. Radar and lidar are crucial in this framework, since they allow sensing of vehicle’s surroundings. In such a scenario, it is necessary
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In recent years, the development of Advanced Driver-Assistance Systems (ADASs) is driving the need for more reliable and precise on-vehicle sensing. Radar and lidar are crucial in this framework, since they allow sensing of vehicle’s surroundings. In such a scenario, it is necessary to master these sensing systems, and knowing their similarities and differences is important. Due to ADAS’s intrinsic real-time performance requirements, it is almost mandatory to be aware of the processing algorithms required by radar and lidar to understand what can be optimized and what actions can be taken to approach the real-time requirement. This review aims to present state-of-the-art radar and lidar technology, mainly focusing on modulation schemes and imaging systems, highlighting their weaknesses and strengths. Then, an overview of the sensor data processing algorithms is provided, with some considerations on what type of algorithms can be accelerated in hardware, pointing to some implementations from the literature. In conclusion, the basic concepts of sensor fusion are presented, and a comparison between radar and lidar is performed.
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Open AccessFeature PaperArticle
Design and Performance Analysis of Hardware Realization of 3GPP Physical Layer for 5G Cell Search
by
Khalid Lodhi, Jayant Chhillar, Sumit J. Darak and Divisha Sharma
Chips 2023, 2(4), 223-242; https://doi.org/10.3390/chips2040014 - 7 Oct 2023
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5G Cell Search (CS) is the first step for user equipment (UE) to initiate communication with the 5G node B (gNB) every time it is powered ON. In cellular networks, CS is accomplished via synchronization signals (SS) broadcasted by gNB. 5G 3rd generation
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5G Cell Search (CS) is the first step for user equipment (UE) to initiate communication with the 5G node B (gNB) every time it is powered ON. In cellular networks, CS is accomplished via synchronization signals (SS) broadcasted by gNB. 5G 3rd generation partnership project (3GPP) specifications offer a detailed discussion on the SS generation at gNB, but a limited understanding of their blind search and detection is available. Unlike 4G, 5G SS may not be transmitted at the center of carrier frequency, and their frequency location is unknown to UE. In this work, we demonstrate the 5G CS by designing 3GPP compatible hardware realization of the physical layer (PHY) of the gNB transmitter and UE receiver. The proposed SS detection explores a novel down-sampling approach resulting in a 60% reduction in on-chip memory and 50% lower search time. Via detailed performance analysis, we analyze the functional correctness, computational complexity, and latency of the proposed approach for different word lengths, signal-to-noise ratio (SNR), and down-sampling factors. We demonstrate end-to-end 5G CS using GNU Radio-based RFNoC framework on the USRP-FPGA platform and achieve 66% faster SS search compared to software. The 3GPP compatibility and demonstration on hardware strengthen the commercial significance of the proposed work.
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Open AccessTechnical Note
Silicon Carbide: Physics, Manufacturing, and Its Role in Large-Scale Vehicle Electrification
by
Filippo Di Giovanni
Chips 2023, 2(3), 209-222; https://doi.org/10.3390/chips2030013 - 13 Sep 2023
Cited by 1
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Silicon carbide is changing power electronics; it is enabling massive car electrification owing to its far more efficient operation with respect to mainstream silicon in a large variety of energy conversion systems like the main traction inverter of an electric vehicle (EV). Its
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Silicon carbide is changing power electronics; it is enabling massive car electrification owing to its far more efficient operation with respect to mainstream silicon in a large variety of energy conversion systems like the main traction inverter of an electric vehicle (EV). Its superior performance depends upon unique properties such as lower switching and conduction losses, safer high-temperature operation and high-voltage capability. Starting briefly with a description of its physics, more detailed information is then given about some key manufacturing steps such as crystal growth and epitaxy. Afterwards, an overview of its inherent defects and how to mitigate them is presented. Finally, a typical EV’s propulsion inverter is shown, proving the technology’s effectiveness in meeting requirements for mass electrification. Foreword: In recent years, SiC has drawn the attention of a growing number of power electronics designers as the material has good prospects for reducing environmental impacts on a global basis. The goal of this paper, based on the author’s contribution to the introduction of the technology at STMicroelectronics, is to show the potential of silicon carbide in enabling massive car electrification. The company’s SiC MOSFETs, tailored to the automotive industry, are enabling visionary EV makers to pave the way for sustainable e-mobility. The intent of this paper is to describe, for a large crowd of readers, how SiC features can accelerate such a transition by quantifying the benefits they bring in terms of improved efficiency in an EV electric powertrain. The paper also has the ambition to highlight the material’s physics and to give an overview of its production processes, starting from the crystal growth for realizing substrates to the main epitaxy techniques. Some space has been devoted to the analysis of the main crystal defects not present in silicon and whose nature poses new challenges in terms of manufacturing yields and screening. Finally, some insights into the market evolution and on the transition to 200 mm wafers are given.
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Open AccessArticle
Synergistic Verification of Hardware Peripherals through Virtual Prototype Aided Cross-Level Methodology Leveraging Coverage-Guided Fuzzing and Co-Simulation
by
Sallar Ahmadi-Pour, Mathis Logemann, Vladimir Herdt and Rolf Drechsler
Chips 2023, 2(3), 195-208; https://doi.org/10.3390/chips2030012 - 8 Sep 2023
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In this paper, we propose a Virtual Prototype (VP) driven verification methodology for Hardware (HW) peripherals. In particular, we combine two approaches that complement each other and use the VP as a readily available reference model: We use (A) Coverage-Guided Fuzzing (CGF) which
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In this paper, we propose a Virtual Prototype (VP) driven verification methodology for Hardware (HW) peripherals. In particular, we combine two approaches that complement each other and use the VP as a readily available reference model: We use (A) Coverage-Guided Fuzzing (CGF) which enables comprehensive verification at the unit-level of the Register-Transfer Level (RTL) HW peripheral with a Transaction Level Modeling (TLM) reference, and (B) an application-driven co-simulation-based approach that enables verification of the HW peripheral at the system-level. As a case-study, we utilize a RISC-V Platform Level Interrupt Controller (PLIC) as HW peripheral and use an abstract TLM PLIC implementation from the open source RISC-V VP as the reference model. In our experiments we find three behavioral mismatches and discuss the observation of these, as well as non-functional timing behavior mismatches, that were found through the proposed synergistic approach. Furthermore, we provide a discussion and considerations on the RTL/TLM Transactors, as they embody one keystone in cross-level methods. As the different approaches uncover different mismatches in our case-study (e.g., behavioral mismatches and timing mismatches), we conclude a synergy between the methods to aid in verification efforts.
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Open AccessArticle
Standard-Cell-Based Comparators for Ultra-Low Voltage Applications: Analysis and Comparisons
by
Riccardo Della Sala, Francesco Centurelli, Giuseppe Scotti and Gaetano Palumbo
Chips 2023, 2(3), 173-194; https://doi.org/10.3390/chips2030011 - 18 Aug 2023
Cited by 3
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This work is focused on the performance of three different standard-cell-based comparator topologies, considering ultra-low-voltage (ULV) operation. The main application scenarios in which standard-cell-based comparators can be exploited are considered, and a set of figures of merit (FoM) to allow an in-depth comparison
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This work is focused on the performance of three different standard-cell-based comparator topologies, considering ultra-low-voltage (ULV) operation. The main application scenarios in which standard-cell-based comparators can be exploited are considered, and a set of figures of merit (FoM) to allow an in-depth comparison among the different topologies is introduced. Then, a set of simulation testbenches are defined in order to simulate and compare the considered topologies implemented in both a 130 nm technology and a 28 nm FDSOI CMOS process. Propagation delay, power consumption and power–delay product are evaluated for different values of the input common mode voltage, as a function of input differential amplitude, and in different supply voltage and temperature conditions. Monte Carlo simulations to evaluate the input offset voltage under mismatch variations are also provided. Simulation results show that the performances of the different comparator topologies are strongly dependent on the input common mode voltage, and that the best values for all the performance figures of merit are achieved by the comparator based on three-input NAND gates, with the only limitation being its non-rail-to-rail input common mode range (ICMR). The performances of the considered comparator topologies have also been simulated for different values of the supply voltage, ranging from 0.3 V to 1.2 V, showing that, even if standard-cell-based comparators can be operated at higher supply voltages by scaling their performances accordingly, the best values of the FoMs are achieved for = 0.3 V.
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Open AccessArticle
A-DSCNN: Depthwise Separable Convolutional Neural Network Inference Chip Design Using an Approximate Multiplier
by
Jin-Jia Shang, Nicholas Phipps, I-Chyn Wey and Tee Hui Teo
Chips 2023, 2(3), 159-172; https://doi.org/10.3390/chips2030010 - 19 Jul 2023
Cited by 2
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For Convolutional Neural Networks (CNNs), Depthwise Separable CNN (DSCNN) is the preferred architecture for Application Specific Integrated Circuit (ASIC) implementation on edge devices. It benefits from a multi-mode approximate multiplier proposed in this work. The proposed approximate multiplier uses two 4-bit multiplication operations
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For Convolutional Neural Networks (CNNs), Depthwise Separable CNN (DSCNN) is the preferred architecture for Application Specific Integrated Circuit (ASIC) implementation on edge devices. It benefits from a multi-mode approximate multiplier proposed in this work. The proposed approximate multiplier uses two 4-bit multiplication operations to implement a 12-bit multiplication operation by reusing the same multiplier array. With this approximate multiplier, sequential multiplication operations are pipelined in a modified DSCNN to fully utilize the Processing Element (PE) array in the convolutional layer. Two versions of Approximate-DSCNN (A-DSCNN) accelerators were implemented on TSMC 40 nm CMOS process with a supply voltage of 0.9 V. At a clock frequency of 200 MHz, the designs achieve 4.78 GOPs/mW and 4.89 GOP/mW power efficiency while occupying 1.16 mm and 0.398 mm area, respectively.
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Open AccessArticle
On-Chip Adaptive Implementation of Neuromorphic Spiking Sensory Systems with Self-X Capabilities
by
Hamam Abd and Andreas König
Chips 2023, 2(2), 142-158; https://doi.org/10.3390/chips2020009 - 6 Jun 2023
Cited by 1
Abstract
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In contemporary devices, the number and diversity of sensors is increasing, thus, requiring both efficient and robust interfacing to the sensors. Implementing the interfacing systems in advanced integration technologies faces numerous issues due to manufacturing deviations, signal swings, noise, etc. The interface sensor
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In contemporary devices, the number and diversity of sensors is increasing, thus, requiring both efficient and robust interfacing to the sensors. Implementing the interfacing systems in advanced integration technologies faces numerous issues due to manufacturing deviations, signal swings, noise, etc. The interface sensor designers escape to the time domain and digital design techniques to handle these challenges. Biology gives examples of efficient machines that have vastly outperformed conventional technology. This work pursues a neuromorphic spiking sensory system design with the same efficient style as biology. Our chip, that comprises the essential elements of the adaptive neuromorphic spiking sensory system, such as the neuron, synapse, adaptive coincidence detection (ACD), and self-adaptive spike-to-rank coding (SA-SRC), was manufactured in XFAB CMOS 0.35 m technology via EUROPRACTICE. The main emphasis of this paper is to present the measurement outcomes of the SA-SRC on-chip, evaluating the efficacy of its adaptation scheme, and assessing its capability to produce spike orders that correspond to the temporal difference between the two spikes received at its inputs. The SA-SRC plays a crucial role in performing the primary function of the adaptive neuromorphic spiking sensory system. The measurement results of the chip confirm the simulation results of our previous work.
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