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Open AccessArticle

Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film

Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester LE1 9BH, UK
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Micromachines 2020, 11(2), 182; https://doi.org/10.3390/mi11020182
Received: 25 January 2020 / Revised: 4 February 2020 / Accepted: 8 February 2020 / Published: 10 February 2020
In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.
Keywords: PEDOT:PSS; memory cells; bistability; retention time; switching PEDOT:PSS; memory cells; bistability; retention time; switching
MDPI and ACS Style

Salaoru, I.; Pantelidis, C.C. Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film. Micromachines 2020, 11, 182.

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