Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct curr...
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (...
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidat...
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters’ (TSEPs) in...
In power conversion of photovoltaic (PV) energy, a hard-switching buck converter always generates some disadvantages. For example, serious electromagnetic interference (EMI), high switching losses, and stresses on an active switch (metal-oxide-semico...
In power semiconductor systems such as inverters, managing losses is critical for optimizing performance. Inverters, which convert DC to AC for applications such as renewable energy systems, motor drives, and power supplies, are significantly affecte...
Semiconductor device dimensions have been decreasing steadily over the past several decades, generating the need to overcome fundamental limitations of both the materials they are made of and the fabrication techniques used to build them. Modern meta...
In this study, a modified design of a two-switch buck-boost (TSBB) converter is proposed to improve power efficiency using fewer conduction components, and the optimal power range is measured. The proposed TSBB converter operates in three topologies:...
The growing attention on plug-in electric vehicles, and the associated high-performance demands, have initiated a development trend towards highly efficient and compact on-board battery chargers. These isolated ac-dc converters are most commonly reali...
To achieve lower switching losses and higher frequency capabilities in converter design, researchers worldwide have been investigating Silicon carbide (SiC) modules and MOSFETs. In power electronics, wide bandgap devices such as Silicon carbide are e...
This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double...
Pulsed plasma thrusters (PPT) have demonstrated enormous potential since the 1960s. One major shortcoming is their low thrust efficiency, typically <30%. Most of these losses are due to joule heating, while some can be attributed to poor efficienc...
We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transis...
Although the miniaturization of metal–oxide–semiconductor field effect transistors (MOSFETs)—the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits—is co...
The semi-bridgeless power factor correction (PFC) rectifier is widely used due to its high power factor, high efficiency, and low electromagnetic interference. However, in this rectifier, the inductor current will flow through the body diode of the m...
TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They ca...
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of ele...
We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). T...
4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics s...
To solve the problem of long turn-off times for transient electromagnetic (TEM) transmitters with inductive loads, a new second-order fast discharge circuit topology added into the original H-bridge structure for TEM transmitters is presented, which...
Nanoporous gold (NPG) has excellent catalytic activity and has been used in the recent literature on this issue as a sensor in various electrochemical and bioelectrochemical reactions. This paper reports on a new type of metal–oxide–semic...
The Complementary Metal-Oxide Semiconductor (CMOS) technology has evolved to a great extent and is being used for different applications like environmental, biomedical, radiofrequency and switching, etc. Metal-Oxide-Semiconductor Field-Effect Transis...
This paper proposes a criterion to select the best family of commercial SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs) that provides the highest quality and reliability. Applying a recently published integrated-cha...
Gate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits. The Hot Carrier (HC) effect cannot be ignored in the development of metal oxide semicond...
This work aims to estimate the Metal-Oxide-Semiconductor Field-Effect Transistor’s (MOSFET) junction temperature, guessing in real time the dynamic drain-source resistance during MOSFET operation in LLC (Inductor-Inductor-Capacitor) converters...
An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (...
When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically chan...
We created tri-gate sub-100 nm In0.53Ga0.47As metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a bi-layer Al2O3/HfO2 gate stack and investigated the scaling effects on equivalent-oxide-thickness (EOT) and fin-width (Wfin) at gate len...
In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present...
Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performa...
Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration. In this study, a 4H–SiC built-in MOS-channel di...
Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in s...
This work investigates the effect of the doping concentration of SiC power metal-oxide–semiconductor field-effect transistors (MOSFETs) under an unclamped inductive switching (UIS) condition. Switching circuits such as inverters and motor-drive...
This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET...
The short circuit withstand energy (SCWE) variations, and short circuit withstand time (SCWT) variations, of planar and trench silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices are studied after exposure t...
The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The ele...
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined w...
Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-e...
In this paper, two dielectric layers of Al2O3 and Gd2O3 were prepared by an atomic layer deposition (ALD) and magnetron sputtering deposition (SD), respectively. Based on this, a metal-oxide-semiconductor field-effect transistor (MOSFET) was successf...
The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for...
This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are eva...
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (...
In this paper, we extensively analyzed the drain-induced barrier lowering (DIBL) and leakage current characteristics of the proposed partial isolation field-effect transistor (PiFET) structure. We then compared the PiFET with the conventional planar...
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering s...
Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-c...
The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the disp...
This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the...
In this paper, a high-speed motor system for an Electric Vehicle (EV) is designed, of which the rated DC-link voltage is 800 V and peak power can reach 200 kW with a high-efficiency Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (S...
Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pul...
This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprise...
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