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Open AccessArticle

Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

1
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, Puli 54561, Taiwan
2
Department of Electrical Engineering, National Chi Nan University, Nantou, Puli 54561, Taiwan
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(12), 673; https://doi.org/10.3390/cryst9120673
Received: 28 November 2019 / Revised: 6 December 2019 / Accepted: 11 December 2019 / Published: 14 December 2019
An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the IDVG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET. View Full-Text
Keywords: negative capacitance; organic ferroelectric material; PVDF; subthreshold slope negative capacitance; organic ferroelectric material; PVDF; subthreshold slope
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MDPI and ACS Style

Lin, J.-J.; Tao, J.-H.; Wu, Y.-L. Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance. Crystals 2019, 9, 673.

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