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Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm
Open AccessArticle

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK
Author to whom correspondence should be addressed.
Present address: Nano & Advanced Materials Institute, Hong Kong University of Science and Technology, Hong Kong
Materials 2014, 7(10), 6965-6981;
Received: 15 January 2014 / Revised: 29 September 2014 / Accepted: 8 October 2014 / Published: 13 October 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
PDF [808 KB, uploaded 13 October 2014]


Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. View Full-Text
Keywords: high-k dielectrics; lanthanide aluminum oxides; pulse capacitance-voltage (CV); oxide traps high-k dielectrics; lanthanide aluminum oxides; pulse capacitance-voltage (CV); oxide traps

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Zhao, C.; Zhao, C.Z.; Lu, Q.; Yan, X.; Taylor, S.; Chalker, P.R. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. Materials 2014, 7, 6965-6981.

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