Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor
Elamaran, D.; Suzuki, Y.; Satoh, H.; Banerjee, A.; Hiromoto, N.; Inokawa, H. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor. Micromachines 2020, 11, 718. https://doi.org/10.3390/mi11080718
Elamaran D, Suzuki Y, Satoh H, Banerjee A, Hiromoto N, Inokawa H. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor. Micromachines. 2020; 11(8):718. https://doi.org/10.3390/mi11080718
Chicago/Turabian StyleElamaran, Durgadevi, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, and Hiroshi Inokawa. 2020. "Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor" Micromachines 11, no. 8: 718. https://doi.org/10.3390/mi11080718


