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Article

Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor

1
Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan
2
Faculty of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
3
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
4
Physics Department, Bidhan Chandra College, Asansol 713 303, India
5
Graduate School of Integrated Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(8), 718; https://doi.org/10.3390/mi11080718
Received: 31 May 2020 / Revised: 15 July 2020 / Accepted: 22 July 2020 / Published: 24 July 2020
Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping), and resistors (n+ or p+ single crystalline Si and n+ polycrystalline Si) were designed and characterized for its possible use in 1-THz antenna-coupled bolometers. The use of a half-wave dipole antenna connected to the heater end was assumed, which limited the integrated temperature sensor/heater area to be 15 × 15 µm. Our main focus was to evaluate the performances of the temperature sensor/heater part, and the optical coupling between the incident light and heater via an antenna was not included in the evaluation. The electrothermal feedback (ETF) effect due to the bias current was considered in the performance estimation. A comparative analysis of various SOI bolometers revealed the largest responsivity (Rv) of 5.16 kV/W for the n-channel MOSFET bolometer although the negative ETF in MOSFET reduced the Rv. The noise measurement of the n-channel MOSFET showed the NEP of 245 pW/Hz1/2, which was more than one order of magnitude smaller than that of the n+ polycrystalline Si resistive bolometer (6.59 nW/Hz1/2). The present result suggests that the n-channel MOSFET can be a promising detector for THz applications. View Full-Text
Keywords: antenna-coupled bolometer; silicon-on-insulator (SOI); temperature sensor; responsivity (Rv); noise equivalent power (NEP); thermal response time (τ) antenna-coupled bolometer; silicon-on-insulator (SOI); temperature sensor; responsivity (Rv); noise equivalent power (NEP); thermal response time (τ)
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MDPI and ACS Style

Elamaran, D.; Suzuki, Y.; Satoh, H.; Banerjee, A.; Hiromoto, N.; Inokawa, H. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor. Micromachines 2020, 11, 718. https://doi.org/10.3390/mi11080718

AMA Style

Elamaran D, Suzuki Y, Satoh H, Banerjee A, Hiromoto N, Inokawa H. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor. Micromachines. 2020; 11(8):718. https://doi.org/10.3390/mi11080718

Chicago/Turabian Style

Elamaran, Durgadevi, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, and Hiroshi Inokawa. 2020. "Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor" Micromachines 11, no. 8: 718. https://doi.org/10.3390/mi11080718

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