Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures
Abstract
:1. Introduction
2. Device Description and Experimental Setup
3. Experimental Results
3.1. Measured Threshold Characteristics after Irradiation
3.2. Measured Turn-On/Off Time Characteristics after Irradiation
3.3. Measured Turn-On/Off Energy Loss Characteristics after Irradiation
4. Analysis and Simulations
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Shu, L.; Liao, H.-L.; Wu, Z.-Y.; Fang, X.-Y.; Liang, S.-W.; Li, T.-D.; Wang, L.; Wang, J.; Zhao, Y.-F. Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures. Electronics 2023, 12, 2194. https://doi.org/10.3390/electronics12102194
Shu L, Liao H-L, Wu Z-Y, Fang X-Y, Liang S-W, Li T-D, Wang L, Wang J, Zhao Y-F. Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures. Electronics. 2023; 12(10):2194. https://doi.org/10.3390/electronics12102194
Chicago/Turabian StyleShu, Lei, Huai-Lin Liao, Zi-Yuan Wu, Xing-Yu Fang, Shi-Wei Liang, Tong-De Li, Liang Wang, Jun Wang, and Yuan-Fu Zhao. 2023. "Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures" Electronics 12, no. 10: 2194. https://doi.org/10.3390/electronics12102194
APA StyleShu, L., Liao, H.-L., Wu, Z.-Y., Fang, X.-Y., Liang, S.-W., Li, T.-D., Wang, L., Wang, J., & Zhao, Y.-F. (2023). Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures. Electronics, 12(10), 2194. https://doi.org/10.3390/electronics12102194