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Volume 13
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10.3390/cryst13050783
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Brief Report

Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3

by
Xiaoyong Lv
1,
Wei Wang
1,
Yanfeng Wang
1,
Genqiang Chen
1,
Shi He
1,
Minghui Zhang
1 and
Hongxing Wang
1,2,*
1
Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China
2
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
*
Author to whom correspondence should be addressed.
Crystals 2023, 13(5), 783; https://doi.org/10.3390/cryst13050783
Submission received: 14 April 2023 / Revised: 4 May 2023 / Accepted: 4 May 2023 / Published: 8 May 2023
(This article belongs to the Special Issue Wide-Bandgap Semiconductors)
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Abstract

In this paper, two dielectric layers of Al2O3 and Gd2O3 were prepared by an atomic layer deposition (ALD) and magnetron sputtering deposition (SD), respectively. Based on this, a metal-oxide-semiconductor field-effect transistor (MOSFET) was successfully prepared on a hydrogen-terminated single-crystal diamond (H-diamond), and its related properties were studied. The results showed that this device had typical p-type channel MOSFET output and transfer characteristics. In addition, the maximum current was 15.3 mA/mm, and the dielectric constant of Gd2O3 was 24.8. The effective mobility of MOSFET with Gd2O3/Al2O3 was evaluated to be 182.1 cm2/Vs. To the best of our knowledge, the bilayer dielectric of Gd2O3/Al2O3 was first used in a hydrogen-terminated diamond MOSFET and had the potential for application.
Keywords: hydrogen-terminated diamond; MOSFET; Gd2O3; 2DHG hydrogen-terminated diamond; MOSFET; Gd2O3; 2DHG

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MDPI and ACS Style

Lv, X.; Wang, W.; Wang, Y.; Chen, G.; He, S.; Zhang, M.; Wang, H. Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3. Crystals 2023, 13, 783. https://doi.org/10.3390/cryst13050783

AMA Style

Lv X, Wang W, Wang Y, Chen G, He S, Zhang M, Wang H. Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3. Crystals. 2023; 13(5):783. https://doi.org/10.3390/cryst13050783

Chicago/Turabian Style

Lv, Xiaoyong, Wei Wang, Yanfeng Wang, Genqiang Chen, Shi He, Minghui Zhang, and Hongxing Wang. 2023. "Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3" Crystals 13, no. 5: 783. https://doi.org/10.3390/cryst13050783

APA Style

Lv, X., Wang, W., Wang, Y., Chen, G., He, S., Zhang, M., & Wang, H. (2023). Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3. Crystals, 13(5), 783. https://doi.org/10.3390/cryst13050783

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