In the race towards two-dimensional electronic and optoelectronic devices, semiconducting transition metal dichalcogenides (TMDCs) from group VIB have been intensively studied in recent years due to the indirect to direct band-gap transition from bul...
This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-m...
In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film’s gro...
Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality...
The structural and electrical properties of PtRu bimetallic alloy (BA) thin films prepared via atomic layer deposition (ALD) were systemically investigated according to the film composition, which was controlled at a deposition temperature of 340 &de...
In previous decades, investigation of superconductors was aimed either at finding materials with higher critical temperatures or at discovering nontypical superconducting behavior. Here, we present the cupric (CuO) thin films, which were synthesized...
We report a new synthesis method for multiple-walled nested thin-film nanostructures by combining hydrothermal growth methods with atomic layer deposition (ALD) thin-film technology and sacrificial films, thereby increasing the surface-to-volume rati...
Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer deposition using O2 plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga2O3 films was about 0.6 Å/cycle and was acquired at...
Coatings with tunable refractive index and high mechanical resilience are useful in optical systems. In this work, thin films of HfO2 doped with Al2O3 were deposited on silicon at 300 °C by using plasma-enhanced atomic layer deposition (PE-ALD)....
In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer i...
We investigate the optical and thermo-optical properties of amorphous TiO\(_2\)–Al\(_2\)O\(_3\) thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO\(_2\)–Al\(_2\)O\(_3\) bilayers are fabricated by growing Al\(_2\)O\(_...
The development of nanoscale power sources with a long battery life is now required for novel nanoelectronic devices, such as wireless sensors, biomedical implants, and smart cards. Lithiated metal oxides (Li–Me–O) are widely used in lithium-ion batt...
Preparation of dense alumina (Al2O3) thin film through atomic layer deposition (ALD) provides a pathway to achieve the encapsulation of organic light emitting devices (OLED). Unlike traditional ALD which is usually executed at higher reaction n tempe...
Indium oxide semiconductors, as one of the channel materials for thin film transistors (TFTs), have been extensively studied. However, the high carrier concentration and excess oxygen defects of intrinsic In2O3 can cause the devices to fail to work p...
Superconducting niobium nitride (NbN) films with nominal thicknesses of 4 nm, 5 nm, 7 nm, and 9 nm were grown on sapphire substrates using atomic layer deposition (ALD). We observed probed Hall resistance (HR) (Rxy) in external out-of-plane magnetic...
Cr2O3 thin films were grown on a Si (1 0 0) substrate using Cr(thd)3 and O3 by atomic layer deposition (ALD) at substrate temperatures (TG) from 200 to 300 °C. X-ray amorphous films were deposited at a TG ≤ 225 °C, whereas at higher temper...
Lithium nickelate (LiNiO2) and materials based on it are attractive positive electrode materials for lithium-ion batteries, owing to their large capacity. In this paper, the results of atomic layer deposition (ALD) of lithium–nickel–silic...
Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film electrodes for Li-ion batteries. In this work, bis(methylcyclopentadienyl) nickel(II) (Ni(MeCp)2) and bis(cyclopentadienyl) nickel(II) (NiCp2) were used as prec...
The efficiency of hydrogen gas generation via electrochemical water splitting has been mostly limited by the availability of electrocatalyst materials that require lower overpotentials during the redox reaction. Noble metals have been used extensivel...
Atomic layer deposition (ALD) of Y2O3 thin films was investigated using Y(MeCp)2(iPr-nPrAMD) precursor and H2O reactant. The self-limiting reaction mechanism of ALD-Y2O3 thin films was confirmed at a growth temperature of 260 °C. And, the saturat...
High-density phases of TiO2, such as rutile and high-pressure TiO2-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO2-II with anatase and rutile have been considered promisin...
The chemical vapor deposition of hexagonal boron nitride layers from BCl3 and NH3 is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its succ...
Thin superconducting films have been a significant part of superconductivity research for more than six decades. They have had a significant impact on the existing consensus on the microscopic and macroscopic nature of the superconducting state. Thin...
This communication shows the recipe for plasma-enhanced atomic layer deposition (PEALD) Al2O3 ultra-thin films with thicknesses below 40 nm. Al2O3 ultra-thin films were deposited by PEALD to improve the rubidium optically pumped atomic magnetometers&...
Lithium fluoride is an important material for ultraviolet optical systems, possessing among the largest optical bandgaps of dielectric materials. We report on the development of an atomic layer deposition (ALD) process for lithium fluoride that is ca...
Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite...
Poly (methyl methacrylate) (PMMA) is a thermoplastic synthetic polymer, which displays superior characteristics such as transparency, good tensile strength, and processability. Its performance can be improved by surface engineering via the use of fun...
Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization i...
Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer...
We report on the growth of ZnO thin films by plasma-enhanced atomic layer deposition as a function of substrate temperature. The method to ensure self-limiting growth with precise thickness control is discussed and the effect of temperature on the te...
The purpose of this paper is to review the research progress in the realization of the organic–inorganic hybrid thin-film packaging of flexible organic electroluminescent devices using the PEALD (plasma-enhanced atomic layer deposition) and MLD...
Synthesizing metal-organic frameworks (MOFs) composites with a controlled morphology is an important requirement to access materials of desired patterning and composition. Since the last decade, MOF growth from sacrificial metal oxide layer is increa...
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method. The arrays of carbon nanotubes w...
The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates...
Patterning of thin films with lithography techniques for making semiconductor devices has been facing increasing difficulties with feature sizes shrinking to the sub-10 nm range, and alternatives have been actively sought from area-selective thin fil...
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. P...
In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO2-based TFTs,...
The demand for ultra-tight encapsulation solutions with excellent barrier and high conformality properties has increased in recent years. To meet these challenges, thin-film barrier coatings have emerged as a promising solution. In this study, we inv...
An infrared transparent conductive material is a solution to realize the shielding function of infrared windows against electromagnetic waves, by combining the two characteristics of high transmission and conductivity in infrared wavelengths. Indium-...
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrop...
In this paper, carbon thin films were grown using the plasma-enhanced atomic layer deposition (PE-ALD). Methane (CH4) was used as the carbon precursor to grow the carbon thin film. The grown film was analyzed by the high-resolution transmission elect...
The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thicknes...
Pt coatings on NiTi film micro-actuators and/or sensors can add some useful properties, e.g., they may improve the NiTi anticorrosion and thermomechanical characteristics or activate surface properties beneficial for a specific application (e.g., fun...
Titanium dioxide (TiO2) thin films are widely employed for photocatalytic and photovoltaic applications where the long lifetime of charge carriers is a paramount requirement for the device efficiency. To ensure the long lifetime, a high temperature t...
We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulato...
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectiv...
Subtle changes in the atomic arrangement of NiTiO3 in the ilmenite structure affects its symmetry and properties. At high temperatures, the cations are randomly distributed throughout the structure, resulting in the corundum structure with R−3c...
The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicat...
Rapid progress in the performance of organic devices has increased the demand for advances in the technology of thin-film permeation barriers and understanding the failure mechanisms of these material systems. Herein, we report the extensive study of...
HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth p...
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