Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.
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