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542 Results Found

  • Article
  • Open Access
5 Citations
3,342 Views
17 Pages

Tunable Iron–Cobalt Thin Films Grown by Electrodeposition

  • Sofia Gonçalves,
  • Vivian Andrade,
  • Célia T. Sousa,
  • João P. Araújo,
  • João H. Belo and
  • Arlete Apolinário

Iron–cobalt (FeCo) alloys are highly desirable for their exceptional and adjustable physicochemical properties, particularly in the form of thin films. This study focuses on the growth of iron–cobalt (FeCo) alloy thin films using potentio...

  • Article
  • Open Access
2 Citations
2,145 Views
17 Pages

Fast, Efficient Tailoring Growth of Nanocrystalline Diamond Films by Fine-Tuning of Gas-Phase Composition Using Microwave Plasma Chemical Vapor Deposition

  • Chunjiu Tang,
  • Antonio J. S. Fernandes,
  • Margarida Facao,
  • Alexandre F. Carvalho,
  • Weixia Chen,
  • Haihong Hou and
  • Florinda M. Costa

18 June 2024

Nanocrystalline diamond (NCD) films are attractive for many applications due to their smooth surfaces while holding the properties of diamond. However, their growth rate is generally low using common Ar/CH4 with or without H2 chemistry and strongly d...

  • Article
  • Open Access
1 Citations
2,880 Views
9 Pages

Local Anodizing of a Newly Prepared Aluminum Micrometric Disk

  • Ludovic Cicutto,
  • Jérome Roche and
  • Laurent Arurault

A search through the literature reveals that the vast majority of studies about aluminum anodizing were conducted at the macroscale (i.e., from cm2 up to m2), while those focused on local anodizing (i.e., on surfaces of less than 1 mm2) are rare. The...

  • Article
  • Open Access
5 Citations
8,067 Views
23 Pages

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

  • Chih-Kai Hu,
  • Chun-Jung Chen,
  • Ta-Chin Wei,
  • Tomi T. Li,
  • Ching-Chiun Wang and
  • Chih-Yung Huang

A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. Th...

  • Article
  • Open Access
5 Citations
1,964 Views
12 Pages

18 October 2021

Environmentally assisted cracking (EAC) is essential in predicting light water reactors’ structural integrity and service life. Alloy 600 (equivalent to Inconel 600) has excellent corrosion resistance and is often used as a welding material in welded...

  • Article
  • Open Access
1 Citations
1,669 Views
23 Pages

23 April 2025

The improvement in ALD growth rate has always been challenging due to its slow atomic-scale depositions. Although Al2O3 ALD is one of the most widely used ALD processes, the effects of its process parameters on growth rate have not been systematicall...

  • Article
  • Open Access
4 Citations
6,447 Views
10 Pages

Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor

  • Chih-Kai Hu,
  • Chun-Jung Chen,
  • Ta-Chin Wei,
  • Tomi T. Li,
  • Chih-Yung Huang,
  • Chu-Li Chao and
  • Yi-Jiun Lin

A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are pr...

  • Article
  • Open Access
5 Citations
8,404 Views
11 Pages

6 March 2015

Silica core-shell nanoparticles of about 60–120 nm with a closed outer layer of bismuth or molybdenum oxide of 1–10 nm were synthesized by an integrated chemical vapor synthesis/chemical vapor deposition process at atmospheric pressure. Film growth r...

  • Article
  • Open Access
6 Citations
1,797 Views
17 Pages

27 September 2024

Drying experiments with varying air temperature and humidity were conducted to investigate the influence of the drying process on the crystallization of thin sucrose films. For the first time, the effects of the nucleation onset, nucleation rate, and...

  • Article
  • Open Access
3 Citations
3,321 Views
17 Pages

Influence of the Deposition Rate and Substrate Temperature on the Morphology of Thermally Evaporated Ionic Liquids

  • Rita M. Carvalho,
  • Cândida Neto,
  • Luís M. N. B. F. Santos,
  • Margarida Bastos and
  • José C. S. Costa

22 March 2023

The wetting behavior of ionic liquids (ILs) on the mesoscopic scale considerably impacts a wide range of scientific fields and technologies. Particularly under vacuum conditions, these materials exhibit unique characteristics. This work explores the...

  • Article
  • Open Access
13 Citations
4,525 Views
14 Pages

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

  • Ming-Jie Zhao,
  • Zhi-Xuan Zhang,
  • Chia-Hsun Hsu,
  • Xiao-Ying Zhang,
  • Wan-Yu Wu,
  • Shui-Yang Lien and
  • Wen-Zhang Zhu

10 April 2021

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-prec...

  • Article
  • Open Access
8 Citations
6,573 Views
10 Pages

12 October 2016

In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the grow...

  • Article
  • Open Access
5 Citations
2,947 Views
9 Pages

30 December 2024

Atomic layer deposition (ALD) of Y2O3 thin films was investigated using Y(MeCp)2(iPr-nPrAMD) precursor and H2O reactant. The self-limiting reaction mechanism of ALD-Y2O3 thin films was confirmed at a growth temperature of 260 °C. And, the saturat...

  • Article
  • Open Access
5 Citations
2,168 Views
9 Pages

18 July 2024

α-Ga2O3 films were grown on a c-plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-Ga2O3 film quality was investigated. The growth rate monotonicall...

  • Article
  • Open Access
8 Citations
7,045 Views
14 Pages

8 January 2016

The Laser Direct Synthesis and Patterning (LDSP) technology has advantages in terms of processing time and cost compared to nanomaterials-based laser additive microfabrication processes. In LDSP, a scanning laser on the substrate surface induces chem...

  • Article
  • Open Access
23 Citations
5,042 Views
19 Pages

11 August 2021

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperature...

  • Article
  • Open Access
6 Citations
3,890 Views
18 Pages

Synthesis of Amorphous Carbon Film in Ethanol Inverse Diffusion Flames

  • Jie Zhu,
  • Fang Li,
  • Guannan Liu,
  • Dong Liu,
  • Qiongyu Li and
  • Erjun Kan

24 August 2018

Recently, carbon nanomaterials have attracted significant attention due to their remarkable physical and chemical properties. The preparation methods and applications of the carbon nanomaterials have developed rapidly. In this study, the flame synthe...

  • Article
  • Open Access
3 Citations
1,341 Views
19 Pages

18 December 2024

The effects of medium and flow rate on the film-forming structures of B10 Cu-Ni alloys and their resistance to corrosion caused by sulfate-reducing bacteria are investigated in this article. Combined with a predicted cloud map of pipeline corrosion a...

  • Article
  • Open Access
5 Citations
4,605 Views
13 Pages

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

  • Jignesh Vanjaria,
  • Venkat Hariharan,
  • Arul Chakkaravarthi Arjunan,
  • Yanze Wu,
  • Gary S. Tompa and
  • Hongbin Yu

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si...

  • Article
  • Open Access
2 Citations
2,797 Views
15 Pages

Investigation of Morphology of Aluminum Co-Doped Scandium Stabilized Zirconia (ScAlSZ) Thin Films

  • Arvaidas Galdikas,
  • Mantas Sriubas,
  • Gediminas Kairaitis,
  • Darius Virbukas,
  • Kristina Bockute,
  • Matas Galdikas,
  • Teresa Moskalioviene and
  • Giedrius Laukaitis

27 December 2021

The morphology of aluminum co-doped scandium stabilized zirconia (ScAlSZ) thin films formed by e-beam deposition system was investigated experimentally and theoretically. The dependencies of surface roughness, and the films’ structure on deposi...

  • Article
  • Open Access
6 Citations
3,458 Views
10 Pages

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

  • Seon Yong Kim,
  • Yong Chan Jung,
  • Sejong Seong,
  • Taehoon Lee,
  • In-Sung Park and
  • Jinho Ahn

6 December 2021

Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafn...

  • Article
  • Open Access
9 Citations
3,756 Views
15 Pages

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

  • Shicong Jiang,
  • Wan-Yu Wu,
  • Fangbin Ren,
  • Chia-Hsun Hsu,
  • Xiaoying Zhang,
  • Peng Gao,
  • Dong-Sing Wuu,
  • Chien-Jung Huang,
  • Shui-Yang Lien and
  • Wenzhang Zhu

19 December 2022

In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. N...

  • Article
  • Open Access
4 Citations
3,484 Views
12 Pages

CVD Diamond Growth Enhanced by a Dynamic Magnetic Field

  • Xuezhang Liu,
  • Kui Wen,
  • Xiaohua Duan,
  • Caihua Wang and
  • Hangyu Long

15 February 2023

A dynamic magnetic field (DMF) with different angular frequencies (50, 100, and 150 π rad/s) was introduced during diamond growth via hot filament chemical vapor deposition (HFCVD). The effects of the dynamic magnetic field on the growth rate, dia...

  • Article
  • Open Access
6 Citations
4,345 Views
12 Pages

28 July 2020

The possibility that charged nanoparticles (CNPs) are generated in the gas phase during direct current (DC) magnetron sputtering of Ag is studied. Sputtered Ag particles could be captured on an ultrathin amorphous carbon membrane for transmission ele...

  • Article
  • Open Access
9 Citations
4,046 Views
14 Pages

Mechanical and Optical Properties of Cr2O3 Thin Films Grown by Atomic Layer Deposition Method Using Cr(thd)3 and Ozone

  • Mahtab Salari Mehr,
  • Lauri Aarik,
  • Taivo Jõgiaas,
  • Aarne Kasikov,
  • Elyad Damerchi and
  • Hugo Mändar

4 October 2023

Cr2O3 thin films were grown on a Si (1 0 0) substrate using Cr(thd)3 and O3 by atomic layer deposition (ALD) at substrate temperatures (TG) from 200 to 300 °C. X-ray amorphous films were deposited at a TG ≤ 225 °C, whereas at higher temper...

  • Article
  • Open Access
7 Citations
9,059 Views
21 Pages

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

  • Júlia Karnopp,
  • Nilton Azevedo Neto,
  • Thaís Vieira,
  • Mariana Fraga,
  • Argemiro da Silva Sobrinho,
  • Julio Sagás and
  • Rodrigo Pessoa

This study investigates the impact of vapour-phase precursor flow rates—specifically those of trimethylaluminum (TMA) and deionized water (H2O)—on the deposition of aluminum oxide (Al2O3) thin films through atomic layer deposition (ALD)....

  • Article
  • Open Access
6 Citations
7,066 Views
10 Pages

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates

  • Gopi K. Samudrala,
  • Yogesh K. Vohra,
  • Michael J. Walock and
  • Robin Miles

13 January 2014

Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2,...

  • Article
  • Open Access
89 Citations
14,421 Views
16 Pages

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

  • Xuguang Luo,
  • Yao Li,
  • Hong Yang,
  • Yuanlan Liang,
  • Kaiyan He,
  • Wenhong Sun,
  • Hao-Hsiung Lin,
  • Shude Yao,
  • Xiang Lu and
  • Zhechuan Feng
  • + 1 author

12 June 2018

Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited...

  • Article
  • Open Access
6 Citations
2,828 Views
13 Pages

18 May 2023

In recent years, polybutylene adipate-co-terephthalate (PBAT) mulch film has become one of the most commonly used biodegradable mulch films in agriculture in an attempt to combat plastic film pollution. However, its degradation characteristics and im...

  • Article
  • Open Access
13 Citations
3,327 Views
10 Pages

Grain Size and Phase Transformation Behavior of TiNi Shape-Memory-Alloy Thin Film under Different Deposition Conditions

  • Joohyeon Bae,
  • Hyunsuk Lee,
  • Duckhyeon Seo,
  • Sangdu Yun,
  • Jeonghyeon Yang,
  • Sunchul Huh,
  • Hyomin Jeong and
  • Jungpil Noh

20 July 2020

TiNi shape-memory-alloy thin films can be used as small high-speed actuators or sensors because they exhibit a rapid response rate. In recent years, the transformation temperature of these films, manufactured via a magnetron sputtering method, was fo...

  • Article
  • Open Access
2 Citations
2,713 Views
13 Pages

Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth

  • Qing Peng,
  • Zhiwei Ma,
  • Shixian Cai,
  • Shuai Zhao,
  • Xiaojia Chen and
  • Qiang Cao

16 April 2023

Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide bandgap, high electron mobility, and high thermal stability for various applications including high-power electronics and deep ultraviolet light-emitting diodes. The...

  • Article
  • Open Access
8 Citations
5,341 Views
10 Pages

29 December 2022

In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film’s gro...

  • Article
  • Open Access
13 Citations
3,946 Views
14 Pages

9 March 2020

This paper developed a three-dimensional model to simulate the process of atomization and liquid film formation during the air-blast spray cooling technological process. The model was solved using the discrete phase model method. Several factors incl...

  • Article
  • Open Access
7 Citations
1,806 Views
22 Pages

Micro-arc oxidation (MAO) is a promising technology for enhancing the wear resistance of engine cylinders by growing a high hardness alumina ceramic film on the surface of light aluminum engine cylinders. However, the positive and negative pulse coor...

  • Article
  • Open Access
13 Citations
4,101 Views
18 Pages

Theoretical Evaluation of Polyelectrolyte Layering during Layer-by-Layer Coating of Ultrafiltration Hollow Fiber Membranes

  • Jakob Stumme,
  • Omjothi Ashokkumar,
  • Saskia Dillmann,
  • Robert Niestroj-Pahl and
  • Mathias Ernst

2 February 2021

Layer-by-layer (LbL) modification of porous membranes for water filtration has become an active research field in the past few years. Different mechanisms regarding polyelectrolyte film growth, swelling and smoothing, transport through these films, e...

  • Feature Paper
  • Article
  • Open Access
21 Citations
10,047 Views
10 Pages

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

  • Haewon Cho,
  • Namgue Lee,
  • Hyeongsu Choi,
  • Hyunwoo Park,
  • Chanwon Jung,
  • Seokhwi Song,
  • Hyunwoo Yuk,
  • Youngjoon Kim,
  • Jong-Woo Kim and
  • Hyeongtag Jeon
  • + 4 authors

28 August 2019

Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200–500 °C, yielding approximately 0.38 Å...

  • Article
  • Open Access
31 Citations
6,497 Views
17 Pages

2 August 2019

The growth of oxide film, which results from the inward oxygen diffusion from a corrosive environment, is a critical consideration for the corrosion resistance of zirconium alloys. This work calculates the oxygen diffusion coefficients in the oxide f...

  • Article
  • Open Access
286 Views
15 Pages

Enhancing the Quality of Diamond Film Growth Through the Synergistic Addition of Nitrogen and Carbon Dioxide

  • Zhanpeng Sheng,
  • Xuejian Cui,
  • Lei Zhao,
  • Yihan Lv,
  • Rongchen Zhang,
  • Defang Kon,
  • Nan Jiang,
  • Jian Yi and
  • Lingxia Zheng

4 January 2026

This study investigates the synergistic effects of co-doping with ultralow-concentration nitrogen and trace carbon dioxide on the growth of polycrystalline diamond films via microwave plasma chemical vapor deposition (MPCVD). The films were character...

  • Feature Paper
  • Article
  • Open Access
20 Citations
4,328 Views
12 Pages

Synthesis of Polycrystalline Diamond Films in Microwave Plasma at Ultrahigh Concentrations of Methane

  • Artem Martyanov,
  • Ivan Tiazhelov,
  • Sergey Savin,
  • Valery Voronov,
  • Vitaly Konov and
  • Vadim Sedov

8 April 2023

Polycrystalline diamond (PCD) films are usually grown by chemical vapor deposition (CVD) in hydrogen–methane mixtures. The synthesis conditions determine the structure and quality of the grown material. Here, we report the complex effect of the...

  • Article
  • Open Access
13 Citations
6,344 Views
9 Pages

Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

  • Bin Peng,
  • Dongdong Gong,
  • Wanli Zhang,
  • Jianying Jiang,
  • Lin Shu and
  • Yahui Zhang

10 August 2016

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y2O3 films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare t...

  • Review
  • Open Access
38 Citations
7,023 Views
18 Pages

A Review of Plastic Film Mulching on Water, Heat, Nitrogen Balance, and Crop Growth in Farmland in China

  • Yin Zhao,
  • Xiaomin Mao,
  • Sien Li,
  • Xi Huang,
  • Jiangang Che and
  • Changjian Ma

29 September 2023

Plastic film mulching has been widely used to improve crop yield and water use efficiency, although the effects of plastic film mulching on water, heat, nitrogen dynamics, and crop growth are rarely presented comprehensively. This study investigated...

  • Article
  • Open Access
11 Citations
5,847 Views
14 Pages

Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

  • Qiang Zhang,
  • Yohanes Pramudya,
  • Wolfgang Wenzel and
  • Christof Wöll

22 June 2021

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain bou...

  • Article
  • Open Access
17 Citations
4,448 Views
13 Pages

Structure, Mechanical and Tribological Properties of MoSN/MoS2 Multilayer Films

  • Yanlong Fu,
  • Tengfei He,
  • Wu Yang,
  • Jiao Xu,
  • Bo Mu,
  • Xianjuan Pang and
  • Peng Wang

10 February 2019

MoSN/MoS2 multilayer films were deposited by a sputtering MoS2 target in alternate Ar and Ar/N2 mixed atmospheres with different nitrogen flow rates. The influence of nitrogen flow rates on the microstructure, mechanical and tribological properties o...

  • Article
  • Open Access
10 Citations
3,768 Views
12 Pages

19 August 2020

Plasmonic metal nanoparticle (NP)-decorated thin films of biobased and biocompatible polymers provide significant opportunities in various biomedical applications. Inspired from the adhesive proteins of the marine mussels, polydopamine (PDA) serves a...

  • Article
  • Open Access
1 Citations
1,505 Views
25 Pages

4 February 2025

Epitaxial growth can be used to guide the controllable growth of one metal on the surface of another substrate by matching the interface lattice, thus improving the dendrite tendency of metal growth. The atomic arrangement of the Cu (111) crystal pla...

  • Article
  • Open Access
3 Citations
2,834 Views
18 Pages

15 April 2023

Silicon carbide is successfully implemented in semiconductor technology; it is also used in systems operating under aggressive environmental conditions, including high temperatures and radiation exposure. In the present work, molecular dynamics model...

  • Review
  • Open Access
24 Citations
7,413 Views
19 Pages

Film mulching technology has greatly improved the efficiency of agricultural production. However, it also causes environmental problems such as soil contamination. Biodegradable mulch films, which represent environmentally friendly alternatives, pres...

  • Article
  • Open Access
7 Citations
4,286 Views
9 Pages

Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates

  • Zhuorui Tang,
  • Lin Gu,
  • Hongping Ma,
  • Chaobin Mao,
  • Sanzhong Wu,
  • Nan Zhang,
  • Jiyu Huang and
  • Jiajie Fan

29 December 2022

The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor. Special attention was paid to the influence of the growth temperature on the sur...

  • Article
  • Open Access
16 Citations
3,771 Views
13 Pages

23 December 2020

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impuls...

  • Article
  • Open Access
680 Views
12 Pages

Isothermal Oxidation Behavior of Nickel Base Single Crystal DD6 Film-Cooling Blades at 1050 °C

  • Chunyan Hu,
  • Xinling Liu,
  • Changkui Liu,
  • Weikang Sun and
  • Chunhu Tao

27 March 2025

The isothermal oxidation behavior of single crystal DD6 film-cooling blades was investigated. The isothermal oxidation tests were conducted at 1050 °C, and the phase analysis was performed by XRD, while SEM (EDS) was employed to observe the mater...

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