Next Article in Journal
Review of Antibacterial Activity of Titanium-Based Implants’ Surfaces Fabricated by Micro-Arc Oxidation
Next Article in Special Issue
Mn-Promoted Growth and Photoluminescence of Molybdenum Disulphide Monolayer
Previous Article in Journal
High-Temperature Corrosion of AlCrSiN Film in Ar-1%SO2 Gas
Previous Article in Special Issue
Using an Atmospheric Pressure Chemical Vapor Deposition Process for the Development of V2O5 as an Electrochromic Material
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle
Coatings 2017, 7(3), 43;

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

Department of Mechanical Engineering, National Central University, Taoyuan 32001, Taiwan
Department of Chemical Engineering, Chung Yuan Christian University, Taoyuan 32023, Taiwan
Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 31040, Taiwan
Author to whom correspondence should be addressed.
Academic Editors: Mingheng Li and Maria Miritello
Received: 3 February 2017 / Revised: 2 March 2017 / Accepted: 7 March 2017 / Published: 15 March 2017
(This article belongs to the Special Issue Chemical Vapor Deposition)
Full-Text   |   PDF [8619 KB, uploaded 15 March 2017]   |  


A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism models were developed through rate of production analysis. All of the results can be compared in one schematic diagram, and the differences among these three mechanisms are pronounced at high temperatures. The simplified reaction mechanisms were then used as input for a two-dimensional computational fluid dynamics code FLUENT, enabling the accurate prediction of growth rates. Validation studies are presented for two types of laboratory-scale reactors (vertical and horizontal). A computational study including thermal and flow field was also performed to investigate the fluid dynamic in those reactors. For each study, the predictions agree acceptably well with the experimental data, indicating the reasonable accuracy of the reaction mechanisms. View Full-Text
Keywords: MOCVD; epitaxy; mechanism; GaN; numerical; thin film growth rate MOCVD; epitaxy; mechanism; GaN; numerical; thin film growth rate

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Hu, C.-K.; Chen, C.-J.; Wei, T.-C.; Li, T.T.; Wang, C.-C.; Huang, C.-Y. Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis. Coatings 2017, 7, 43.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Coatings EISSN 2079-6412 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top