Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates
Abstract
:1. Introduction
2. Experiments and Methods
3. Results and Discussion
3.1. Growth Temperature
3.2. Gas Flow Ratio
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
- Roccaforte, F.; Fiorenza, P.; Greco, G.; Nigro, R.L.; Giannazzo, F.; Iucolano, F.; Saggio, M. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. Microelectron. Eng. 2018, 187, 66–77. [Google Scholar] [CrossRef]
- Zhao, L. Surface defects in 4H-SiC homoepitaxial layers. Nanotechnol. Precis. Eng. 2020, 3, 229–234. [Google Scholar] [CrossRef]
- Fukuda, K.; Okamoto, D.; Okamoto, M.; Deguchi, T.; Mizushima, T.; Takenaka, K.; Fujisawa, H.; Harada, S.; Tanaka, Y.; Yonezawa, Y. Development of ultrahigh-voltage SiC devices. IEEE Trans. Electron Devices 2014, 62, 396–404. [Google Scholar] [CrossRef]
- Sharma, Y.; Jiang, H.; Zheng, C.; Dai, X.; Wang, Y.; Deviny, I. Impact of design and process variation on the fabrication of SiC diodes. J. Semicond. 2018, 39, 114001. [Google Scholar] [CrossRef]
- Tsuchida, H.; Kamata, I.; Miyazawa, T.; Ito, M.; Zhang, X.; Nagano, M. Recent advances in 4H-SiC epitaxy for high-voltage power devices. Mater. Sci. Semicond. Process. 2018, 78, 2–12. [Google Scholar] [CrossRef]
- Dhanaraj, G.; Dudley, M.; Chen, Y.; Ragothamachar, B.; Wu, B.; Zhang, H. Epitaxial growth and characterization of silicon carbide films. J. Cryst. Growth 2006, 287, 344–348. [Google Scholar] [CrossRef]
- Nakamura, S.; Kimoto, T.; Matsunami, H. Rate-determining process in chemical vapor deposition of SiC on off-axis α-SiC (0001). J. Cryst. Growth 2004, 270, 455–461. [Google Scholar] [CrossRef]
- Kuroda, N.; Shibahara, K.; Yoo, W.S.; Nishino, S.; Matsunami, H. Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures. In Proceedings of the 1987 Conference on Solid State Devices and Materials, Tokyo, Japan, 25–27 August 1987; pp. 227–229. [Google Scholar] [CrossRef]
- Li, X.; Hassan, J.; Kordina, O.; Janzén, E.; Henry, A. Surface preparation of 4 off-axis 4H-SiC substrate for epitaxial growth. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2013; pp. 225–228. [Google Scholar]
- Tsuchida, H.; Ito, M.; Kamata, I.; Nagano, M. Fast epitaxial growth of 4H-SiC and analysis of defect transfer. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2009; pp. 67–72. [Google Scholar]
- Chen, W.; Capano, M. Growth and characterization of 4 H-Si C epilayers on substrates with different off-cut angles. J. Appl. Phys. 2005, 98, 114907. [Google Scholar] [CrossRef]
- Kojima, K.; Okumura, H.; Kuroda, S.; Arai, K. Homoepitaxial growth of 4H-SiC on on-axis (0001) C-face substrates by chemical vapor depositon. J. Cryst. Growth 2004, 269, 367–376. [Google Scholar] [CrossRef]
- Wada, K.; Kimoto, T.; Nishikawa, K.; Matsunami, H. Epitaxial growth of 4H–SiC on 4 off-axis (0 0 0 1) and (0 0 0 1) substrates by hot-wall chemical vapor deposition. J. Cryst. Growth 2006, 291, 370–374. [Google Scholar] [CrossRef]
- Saitoh, H.; Kimoto, T.; Matsunami, H. Uniformity improvement in SiC epitaxial growth by horizontal hot-wall CVD. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2003; pp. 185–188. [Google Scholar]
- Hassan, J.; Bae, H.T.; Lilja, L.; Farkas, I.; Kim, I.; Stenberg, P.; Sun, J.W.; Kordina, O.; Bergman, P.; Ha, S.Y. Fast growth rate epitaxy on 4 off-cut 4-inch diameter 4H-SiC wafers. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2014; pp. 179–182. [Google Scholar]
- Leone, S.; Henry, A.; Janzén, E.; Nishizawa, S. Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates. J. Cryst. Growth 2013, 362, 170–173. [Google Scholar] [CrossRef]
- Das, H.; Sunkari, S.G.; Oldham, T.; Casady, J.R.; Casady, J.B. High Uniformity with Reduced Surface Roughness of Chloride based CVD process on 100 mm 4 off-axis 4H-SiC. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2012; pp. 93–96. [Google Scholar]
- Niu, Y.; Tang, X.; Sang, L.; Li, Y.; Kong, L.; Tian, L.; Tian, H.; Wu, P.; Jia, R.; Yang, F. The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC. J. Cryst. Growth 2018, 504, 37–40. [Google Scholar] [CrossRef]
- Yan, G.; He, Y.; Shen, Z.; Cui, Y.; Li, J.; Zhao, W.; Wang, L.; Liu, X.; Zhang, F.; Sun, G. Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates. J. Cryst. Growth 2020, 531, 125362. [Google Scholar] [CrossRef]
- Li, Y.; Zhao, Z.; Zhu, Z.; Li, Z. Aluminum doping property in SiC epilayers grown at high growth rate using chloride-based CVD. J. Mater. Sci. Mater. Electron. 2015, 26, 2338–2342. [Google Scholar] [CrossRef]
- Makarov, Y.; Litvin, D.; Vasiliev, A.; Nagalyuk, S. Sublimation growth of 4 and 6 inch 4H-SiC low defect bulk crystals in Ta (TaC) crucibles. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2016; pp. 101–104. [Google Scholar]
- Quast, J.; Hansen, D.; Loboda, M.; Manning, I.; Moeggenborg, K.; Mueller, S.; Parfeniuk, C.; Sanchez, E.; Whiteley, C. High quality 150 mm 4H SiC wafers for power device production. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2015; pp. 56–59. [Google Scholar]
- Daigo, Y.; Ishiguro, A.; Ishii, S.; Kobayashi, T.; Moriyama, Y. Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2020; pp. 78–83. [Google Scholar]
- Sun, Y.; Feng, G.; Kang, J.; Zhang, J.; Qian, W. Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4° 4H-SiC Epitaxial Wafers. J. Electron. Mater. 2018, 47, 5109–5112. [Google Scholar] [CrossRef]
- Miyasaka, A.; Norimatsu, J.; Fukada, K.; Tajima, Y.; Muto, D.; Kimura, Y.; Odawara, M.; Okano, T.; Momose, K.; Osawa, Y. Step-bunching free and 30 μm-thick SiC epitaxial layer growth on 150 mm SiC substrate. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2013; pp. 197–200. [Google Scholar]
- Daigo, Y.; Ishii, S.; Kobayashi, T. Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD. Jpn. J. Appl. Phys. 2019, 58, SBBK06. [Google Scholar] [CrossRef]
- Fujibayashi, H.; Ito, M.; Ito, H.; Kamata, I.; Naito, M.; Hara, K.; Yamauchi, S.; Suzuki, K.; Yajima, M.; Mitani, S. Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation. Appl. Phys. Express 2013, 7, 015502. [Google Scholar] [CrossRef]
- Zhao, L.; Yang, L.; Wu, H. High quality 4H-SiC homo-epitaxial wafer using the optimal C/Si ratio. J. Cryst. Growth 2020, 530, 125302. [Google Scholar] [CrossRef]
- Wang, J.; Zhao, S.; Yan, G.; Shen, Z.; Zhao, W.; Wang, L.; Liu, X. Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching. Crystals 2022, 12, 788. [Google Scholar] [CrossRef]
- Zhao, S.; Wang, J.; Yan, G.; Shen, Z.; Zhao, W.; Wang, L.; Liu, X. Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions. Coatings 2022, 12, 597. [Google Scholar] [CrossRef]
- Leone, S.; Pedersen, H.; Henry, A.; Kordina, O.; Janzén, E. Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates. J. Cryst. Growth 2009, 311, 3265–3272. [Google Scholar] [CrossRef]
- Yazdanfar, M.; Ivanov, I.G.; Pedersen, H.; Kordina, O.; Janzén, E. Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates. J. Appl. Phys. 2013, 113, 223502. [Google Scholar] [CrossRef] [Green Version]
- Ellison, A.; Zhang, J.; Magnusson, W.; Henry, A.; Wahab, Q.-u.; Bergman, P.; Hemmingsson, C.G.; Son, N.T.; Janzén, E. Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2000; pp. 131–136. [Google Scholar]
- Kushibe, M.; Ishida, Y.; Okumura, H.; Takahashi, T.; Masahara, K.; Ohno, T.; Suzuki, T.; Tanaka, T.; Yoshida, S.; Arai, K. Competitive growth between deposition and etching in 4H-SiC CVD epitaxy using quasi-hot wail reactor. In Materials Science Forum; Trans Tech Publications Ltd.: Zurich-Uetikon, Switzerland, 2000; pp. 169–172. [Google Scholar]
- Zhang, J.; Ellison, A.; Linnarsson, M.; Janzén, E.; Henry, A. Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor. J. Cryst. Growth 2001, 226, 267–276. [Google Scholar] [CrossRef]
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Tang, Z.; Gu, L.; Ma, H.; Mao, C.; Wu, S.; Zhang, N.; Huang, J.; Fan, J. Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates. Crystals 2023, 13, 62. https://doi.org/10.3390/cryst13010062
Tang Z, Gu L, Ma H, Mao C, Wu S, Zhang N, Huang J, Fan J. Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates. Crystals. 2023; 13(1):62. https://doi.org/10.3390/cryst13010062
Chicago/Turabian StyleTang, Zhuorui, Lin Gu, Hongping Ma, Chaobin Mao, Sanzhong Wu, Nan Zhang, Jiyu Huang, and Jiajie Fan. 2023. "Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates" Crystals 13, no. 1: 62. https://doi.org/10.3390/cryst13010062
APA StyleTang, Z., Gu, L., Ma, H., Mao, C., Wu, S., Zhang, N., Huang, J., & Fan, J. (2023). Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates. Crystals, 13(1), 62. https://doi.org/10.3390/cryst13010062