Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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Author to whom correspondence should be addressed.
Academic Editor: Jiyong Kim
Materials 2016, 9(8), 686; https://doi.org/10.3390/ma9080686
Received: 27 June 2016
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Revised: 27 July 2016
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Accepted: 8 August 2016
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Published: 10 August 2016
(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)
AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y2O3 films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N2/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y2O3/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N2/Ar flow rate or sputtering pressure, and increases with the further increase of the N2/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y2O3/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film’s growth mechanism of the two-step deposition process, preparing highly c-axis–oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective.
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Keywords:
aluminum nitride thin films; c-axis orientation; Hastelloy tapes; two-step deposition technique; growth mechanism
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MDPI and ACS Style
Peng, B.; Gong, D.; Zhang, W.; Jiang, J.; Shu, L.; Zhang, Y. Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique. Materials 2016, 9, 686. https://doi.org/10.3390/ma9080686
AMA Style
Peng B, Gong D, Zhang W, Jiang J, Shu L, Zhang Y. Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique. Materials. 2016; 9(8):686. https://doi.org/10.3390/ma9080686
Chicago/Turabian StylePeng, Bin, Dongdong Gong, Wanli Zhang, Jianying Jiang, Lin Shu, and Yahui Zhang. 2016. "Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique" Materials 9, no. 8: 686. https://doi.org/10.3390/ma9080686
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