76 Results Found

In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V...

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the positio...

By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO₂ and at the HfO₂/InGaAs interfaces are studi...

Interface traps between a gate insulator and beta-gallium oxide (β-Ga₂O₃) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature...

This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the c...

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, P...

7-Benzylidenenaltrexone (BNTX) and most of its derivatives showed in vitro antimalarial activities against chloroquine-resistant and -sensitive Plasmodium falciparum strains (K1 and FCR3, respectively). In addition, the time-dependent changes of the...

The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride...

Barium stannate is known as a promising proton-conducting material for clean energy applications. In this work, we elucidate the effect of the interaction of protons and oxygen vacancies with acceptor impurities on proton conduction in acceptor-doped...

The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN ba...

In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation...

Substrate voltage (V_SUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be...

In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (P_out). The short-circuit current density (J_SC) and open-circui...

Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, ha...

Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature depende...

The temperature-dependent ON-state breakdown $B{V}_{ON}$ loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlGaN back barrier were investigated using the gate current extraction technique. The impact ionization of acceptor-like traps was...

The realization of desirable vertical phase separation, enabled by sequential processing that allows for the separate deposition and targeted regulation of donor and acceptor components to construct a well-defined donor–acceptor (D-A) interface...

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen v...

The two-step layer-by-layer (LBL) deposition of donor and acceptor films enables desired vertical phase separation and high performance in organic solar cells (OSCs), which becomes a promising technology for large-scale printing devices. However, lim...

The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs). The fraction of filled traps increases with the threading dislocations, while the trappin...

We have investigated the effect of electron effective mass (m_e*) and tail acceptor-like edge traps density (N_TA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the...

The properties of organic heterostructures with mixed layers made of arylenevinylene-based polymer donor and non-fullerene perylene diimide acceptor, deposited using Matrix Assisted Pulsed Laser Evaporation on flat Al and nano-patterned Al electrodes...

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against mea...

The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization i...

Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance&n...

Significant progress has been made in the advancement of perovskite solar cells, but their commercialization remains hindered by their lead-based toxicity. Many non-toxic perovskite-based solar cells have demonstrated potential, such as Cs₂AgBi_0.75Sb...

We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the s...

The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (refe...

Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the chara...

The dynamic on-resistance (R_ON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic R_ON with off-state voltage ranging from 50 to 400 V is ascribed to th...

In this article, a dedicated testing system is developed to realize low-delay threshold voltage (V_TH) characteristic testing of silicon carbide (SiC) MOSFET devices after an avalanche stress. The developed low-delay testing system enables V_TH detecti...

This paper presents the electrical characterization of the on-resistance (R_ON) of on-wafer 100 V p-GaN power High-Electron-Mobility Transistors (HEMTs). This study assesses device degradation in the context of a monolithically integrated half-bridge...

This review summarizes the most widely used mechanisms in memory devices based on conjugated polymers, such as charge transfer, space charge traps, and filament conduction. In addition, recent studies of conjugated polymers for memory device applicat...

The nitrogenated holey two-dimensional carbon nitride (${\mathrm{C}}_2\mathrm{N}$) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The ${\mathrm{C}}_2\mathrm{N}$ possesses favorable opt...

The presence of surface trap states (STSs) is one of the key factors to affect the electronic and optical properties of quantum dots (QDs), however, the exact mechanism of how STSs influence QDs remains unclear. Herein, we demonstrated the impact of...

Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC)...

Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar mem...

Ternary organic photovoltaics (OPVs) are considered as the next step beyond binary systems, aiming to achieve synergistic improvements in absorption, energetic alignment, and charge transport. However, despite their conceptual appeal, most ternary bl...

Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure expe...

The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware found...

The interaction of light with semiconducting materials becomes the center of a wide range of technologies, such as photocatalysis. This technology has recently attracted increasing attention due to its prospective uses in green energy and environment...

Electron transfer plays a crucial role in ROS generation in living systems. Molecular oxygen acts as the terminal electron acceptor in the respiratory chains of aerobic organisms. Two main mechanisms of antioxidant defense by exogenous antioxidants a...

In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study V_TH and R_ON drifts induced by on-state stress at V_DS = 50 V. The results...

Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were ana...

In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the...

Rhodotorula dairenensis β-fructofuranosidase is a highly glycosylated enzyme with broad substrate specificity that catalyzes the synthesis of 6-kestose and a mixture of the three series of fructooligosaccharides (FOS), fructosylating a variety o...

In this paper, narrow-bandgap polymer acceptors combining a benzotriazole (BTz)-core fused-ring segment, named the PZT series, were used with a high-absorption-efficiency polymer (PBDB) compound with branched 2-butyl octyl, linear n-octyl, and methyl...

The photoinitiation properties of two porphyrins were evaluated for the free-radical photopolymerization (FRP) of a bio-based acrylated monomer, i.e., soybean oil acrylate (SOA). Their combination with various co-initiators, such as a tertiary amine...

Halogen bonds (XBs) between metal anions and halides have seldom been reported because metal anions are reactive for XB donors. The pyramidal-shaped Mn(CO)₅⁻ anion is a candidate metallic XB acceptor with a ligand-protected metal core that main...

The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free (“Ga-free”) InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods. Het...