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Micromachines 2014, 5(3), 570-582;

Reliability Investigation of GaN HEMTs for MMICs Applications

Department of Engineering "Enzo Ferrari", University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena, Italy
Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy
SELEX ES, Via Tiburtina km. 12400, 00131 Roma, Italy
Author to whom correspondence should be addressed.
Received: 30 May 2014 / Revised: 21 July 2014 / Accepted: 21 July 2014 / Published: 22 August 2014
(This article belongs to the Special Issue Advances in MMICs)
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Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented. View Full-Text
Keywords: GaN HEMT (High Electron Mobility Transistors); reliability; RF stress; degradation mechanism GaN HEMT (High Electron Mobility Transistors); reliability; RF stress; degradation mechanism

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Chini, A.; Meneghesso, G.; Pantellini, A.; Lanzieri, C.; Zanoni, E. Reliability Investigation of GaN HEMTs for MMICs Applications. Micromachines 2014, 5, 570-582.

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