High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
Tajalli, A.; Meneghini, M.; Besendörfer, S.; Kabouche, R.; Abid, I.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials 2020, 13, 4271. https://doi.org/10.3390/ma13194271
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 2020; 13(19):4271. https://doi.org/10.3390/ma13194271
Chicago/Turabian StyleTajalli, Alaleh; Meneghini, Matteo; Besendörfer, Sven; Kabouche, Riad; Abid, Idriss; Püsche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio. 2020. "High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications" Materials 13, no. 19: 4271. https://doi.org/10.3390/ma13194271