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Article

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

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Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, via P. Vivarelli 10, 41125 Modena, Italy
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Department of Sciences and Methods for Engineering (DISMI) and EN&TECH Center, University of Modena and Reggio Emilia, via G. Amendola, 2, 42122 Reggio Emilia, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Ali Soltani
Micromachines 2021, 12(6), 709; https://doi.org/10.3390/mi12060709
Received: 26 May 2021 / Revised: 10 June 2021 / Accepted: 15 June 2021 / Published: 16 June 2021
The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give rise to dispersion, leading to the so-called “current collapse” as a collateral effect. Moreover, first-principles calculations and experimental evidence point out that C introduces trap levels of both acceptor and donor types. Here, we report on the modeling of the donor/acceptor compensation ratio (CR), that is, the ratio between the density of donors and acceptors associated with C doping, to consistently and univocally reproduce experimental breakdown voltage (VBD) and current-collapse magnitude (ΔICC). By means of calibrated numerical device simulations, we confirm that ΔICC is controlled by the effective trap concentration (i.e., the difference between the acceptor and donor densities), but we show that it is the total trap concentration (i.e., the sum of acceptor and donor densities) that determines VBD, such that a significant CR of at least 50% (depending on the technology) must be assumed to explain both phenomena quantitatively. The results presented in this work contribute to clarifying several previous reports, and are helpful to device engineers interested in modeling C-doped lateral GaN power HEMTs. View Full-Text
Keywords: GaN power HEMTs; breakdown voltage; current collapse; compensation ratio; auto-compensation; carbon doping GaN power HEMTs; breakdown voltage; current collapse; compensation ratio; auto-compensation; carbon doping
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MDPI and ACS Style

Zagni, N.; Chini, A.; Puglisi, F.M.; Pavan, P.; Verzellesi, G. On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines 2021, 12, 709. https://doi.org/10.3390/mi12060709

AMA Style

Zagni N, Chini A, Puglisi FM, Pavan P, Verzellesi G. On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines. 2021; 12(6):709. https://doi.org/10.3390/mi12060709

Chicago/Turabian Style

Zagni, Nicolò, Alessandro Chini, Francesco M. Puglisi, Paolo Pavan, and Giovanni Verzellesi. 2021. "On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs" Micromachines 12, no. 6: 709. https://doi.org/10.3390/mi12060709

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