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Nanomaterials 2018, 8(5), 293; https://doi.org/10.3390/nano8050293

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
3
Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
*
Authors to whom correspondence should be addressed.
Received: 26 March 2018 / Revised: 25 April 2018 / Accepted: 26 April 2018 / Published: 2 May 2018
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Abstract

Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. Ohmic contact with a good device performance was achieved when a-STO was matched with indium-tin-oxide (ITO) or Mo electrodes. The acceptor-like densities of trap states (DOS) of a-STO TFTs were further investigated by using low-frequency capacitance–voltage (C–V) characteristics to understand the impact of the electrode on the device performance. The reason of the distinct electrical performances of the devices with ITO and Mo contacts was attributed to different DOS caused by the generation of local defect states near the electrodes, which distorted the electric field distribution and formed an electrical potential barrier hindering the flow of electrons. It is of significant importance for circuit designers to design reliable integrated circuits with SnO2-based devices applied in flat panel displays. View Full-Text
Keywords: source/drain electrodes; thin film transistors; Si-doped SnO2; density of states source/drain electrodes; thin film transistors; Si-doped SnO2; density of states
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Liu, X.; Ning, H.; Chen, W.; Fang, Z.; Yao, R.; Wang, X.; Deng, Y.; Yuan, W.; Wu, W.; Peng, J. Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors. Nanomaterials 2018, 8, 293.

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