Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electr...
Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing power electronics with greater efficiency and durability than Silicon. Nevertheless, their widespread use is limited by reliability challenges, including thermal degradation, defect...
This work explores the principle of utilizing gallium nitride devices as a gate driver for silicon carbide power devices. As silicon has long reached its performance limits, Wide Bandgap semiconductors such as gallium nitride and silicon carbide have...
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However,...
In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)–gallium nitride (GaN) slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as...
Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching los...
A comprehensive investigation of hydrogen grabbing towards the formation of hetero-clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, and Pt–AlGaN–H was carried out using DFT computations at...
Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in sil...
Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial. Specifically, the silicon carbide (SiC)...
Staying in control of delicate processes in the evermore emerging field of micro, nano and quantum-technologies requires suitable devices to measure temperature and temperature flows with high thermal and spatial resolution. In this work, we design o...
Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission...
This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, a series inductor-based stability enhancement tec...
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidat...
In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was i...
Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mech...
The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-lay...
Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential t...
Silicon carbide is changing power electronics; it is enabling massive car electrification owing to its far more efficient operation with respect to mainstream silicon in a large variety of energy conversion systems like the main traction inverter of...
Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of...
The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a...
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (...
This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significa...
The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from...
This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of k...
Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT...
Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derive...
Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile commun...
High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhan...
3 September 2021
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material...
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor...
This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014. GaN-FETs are built as a cascade...
The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodete...
Defect single-photon emitters (SPE) in gallium nitride (GaN) have garnered great attentions in recent years due to the advantages they offer, including the ability to operate at room temperature, narrow emission linewidths, and high brightness. Never...
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performan...
In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900...
Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the...
12 November 2025
Aluminum nitride (AlN), diamond, and β-phase gallium oxide (β-Ga2O3) belong to the family of ultra-wide bandgap (UWBG) semiconductors and exhibit remarkable properties for future power and optoelectronic applications. Compared to convention...
Air pollution poses serious problems as global industrialization continues to thrive. Since air pollution has grave impacts on human health, industry experts are starting to fathom how to integrate particulate matter (PM) sensors into portable device...
To achieve lower switching losses and higher frequency capabilities in converter design, researchers worldwide have been investigating Silicon carbide (SiC) modules and MOSFETs. In power electronics, wide bandgap devices such as Silicon carbide are e...
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order...
This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison to traditional silicon-based devices...
This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combinin...
This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the...
Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particul...
This paper presents a lumped scalable model for spiral inductors in a radio frequency (RF) gallium nitride (GaN) technology on silicon substrate. The model has been developed by exploiting electromagnetic (EM) simulations of geometrically scaled spir...
Gallium Nitride (GaN) power devices can offer better switching performance and higher efficiency than Silicon Carbide (SiC) and Silicon (Si) devices in power electronics applications. GaN has extensively been incorporated in electric vehicle charging...
This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bu...
In this paper, a new three-level boost converter with continuous input current, common ground, reduced voltage stress on the power switches, and wide voltage gain range is proposed. The proposed converter is composed of a three-level flying-capacitor...
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal materi...
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement...
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