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Open AccessFeature PaperArticle

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

1
Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 615-8577, Japan
2
Electrical and Electronics Systems Research Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
3
Power Electronics, Machines and Control (PEMC) Group, University of Nottingham, Nottingham NG7 2RD, UK
4
Department of Electrical Engineering and Computer Science (DIEECS), University of Oviedo, 33203 Gijon, Spain
*
Author to whom correspondence should be addressed.
Energies 2019, 12(23), 4462; https://doi.org/10.3390/en12234462
Received: 17 October 2019 / Revised: 11 November 2019 / Accepted: 18 November 2019 / Published: 22 November 2019
(This article belongs to the Special Issue Advanced Materials/Devices for Power Electronics)
Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology. View Full-Text
Keywords: Wide-bandgap semiconductors; silicon carbide (SiC) MOSFETs; gallium nitride (GaN) HEMTs; renewable energies; power converter; multilevel inverters; dual-active bridge converter; energy storage Wide-bandgap semiconductors; silicon carbide (SiC) MOSFETs; gallium nitride (GaN) HEMTs; renewable energies; power converter; multilevel inverters; dual-active bridge converter; energy storage
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Castellazzi, A.; Gurpinar, E.; Wang, Z.; Suliman Hussein, A.; Garcia Fernandez, P. Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage. Energies 2019, 12, 4462.

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