Next Article in Journal
Research on Unstructured Text Data Mining and Fault Classification Based on RNN-LSTM with Malfunction Inspection Report
Next Article in Special Issue
A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs
Previous Article in Journal
Accurate and Efficient Torque Control of an Interior Permanent Magnet Synchronous Motor in Electric Vehicles Based on Hall-Effect Sensors
Previous Article in Special Issue
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs
Open AccessArticle

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

1
Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
2
Vishay General Semiconductor, Taipei 23145, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editors: Alberto Castellazzi and Andrea Irace
Energies 2017, 10(3), 407; https://doi.org/10.3390/en10030407
Received: 15 December 2016 / Revised: 14 March 2017 / Accepted: 16 March 2017 / Published: 21 March 2017
(This article belongs to the Special Issue Semiconductor Power Devices)
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed. View Full-Text
Keywords: wide band gap semiconductors; III–V semiconductors; gallium compounds; enhancement; GaN; HEMT; switching; parasitics; inductance; SPICE; clamped; Miller capacitance wide band gap semiconductors; III–V semiconductors; gallium compounds; enhancement; GaN; HEMT; switching; parasitics; inductance; SPICE; clamped; Miller capacitance
Show Figures

Figure 1

MDPI and ACS Style

Efthymiou, L.; Camuso, G.; Longobardi, G.; Chien, T.; Chen, M.; Udrea, F. On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies 2017, 10, 407. https://doi.org/10.3390/en10030407

AMA Style

Efthymiou L, Camuso G, Longobardi G, Chien T, Chen M, Udrea F. On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies. 2017; 10(3):407. https://doi.org/10.3390/en10030407

Chicago/Turabian Style

Efthymiou, Loizos; Camuso, Gianluca; Longobardi, Giorgia; Chien, Terry; Chen, Max; Udrea, Florin. 2017. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs" Energies 10, no. 3: 407. https://doi.org/10.3390/en10030407

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop