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Article

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

1
Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania
2
Laboratory of Semiconductor Characterization, Institute of High Pressure Physics PAS (UNIPRESS), ul. Sokołowska 29/37, 01-142 Warsaw, Poland
*
Authors to whom correspondence should be addressed.
Academic Editors: Milan Ťapajna and Filip Gucmann
Materials 2022, 15(6), 2066; https://doi.org/10.3390/ma15062066
Received: 23 February 2022 / Revised: 2 March 2022 / Accepted: 5 March 2022 / Published: 11 March 2022
(This article belongs to the Special Issue Wide and Ultra-Wide Bandgap Semiconductor Materials for Power Devices)
The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from 0.1 THz to 60 THz at two temperatures of 77 K and 300 K. The epilayers demonstrated the low-field electron mobility and density values reaching up to 1021 cm2/V·s and 1.06 × 1016 cm−3 (at 300 K) and 2652 cm2/V·s and 0.21 × 1016 cm−3 (at 77 K), respectively. Maximum injected electric power value till the damage of the GaN epilayer was found to be up to 1.8 GW/cm3 and 5.1 GW/cm3 at 77 K and 300 K, respectively. The results indicate new practical possibilities of the GaN material controlled by an external electric field. View Full-Text
Keywords: gallium nitride with low electron density; shallow silicon impurity; low-field electron mobility; electrical performance; strong pulsed electric field gallium nitride with low electron density; shallow silicon impurity; low-field electron mobility; electrical performance; strong pulsed electric field
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MDPI and ACS Style

Balagula, R.M.; Subačius, L.; Jorudas, J.; Janonis, V.; Prystawko, P.; Grabowski, M.; Kašalynas, I. High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials 2022, 15, 2066. https://doi.org/10.3390/ma15062066

AMA Style

Balagula RM, Subačius L, Jorudas J, Janonis V, Prystawko P, Grabowski M, Kašalynas I. High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials. 2022; 15(6):2066. https://doi.org/10.3390/ma15062066

Chicago/Turabian Style

Balagula, Roman M., Liudvikas Subačius, Justinas Jorudas, Vytautas Janonis, Pawel Prystawko, Mikolaj Grabowski, and Irmantas Kašalynas. 2022. "High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate" Materials 15, no. 6: 2066. https://doi.org/10.3390/ma15062066

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