- Article
An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters
- Dong Yan,
- Lijun Hang,
- Yuanbin He,
- Zhen He and
- Pingliang Zeng
The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization. Compared with the traditional Si t...