In this paper, an In0.53Ga0.47As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N+-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditio...
Olive oil phenols are recognized as molecules with numerous positive health effects, many of which rely on their antioxidative activity, i.e., the ability to transfer hydrogen to radicals. Proton-coupled electron transfer reactions and hydrogen tunne...
A new possible mechanism of signal detection in the THz range is investigated, based on the excitation of resonances due to the tunneling effect between two graphene nanoribbons. A simple detector is proposed, where two graphene nanoribbons are used...
Conventional electrical circuits are generally rigid in their components and working styles, which are not flexible and stretchable. As an alternative, liquid-metal-based soft electronics offer important opportunities for innovation in modern bioelec...
To realize quantum tunneling applications with movable electrodes, sharp tips with radii down to several tens of nanometers are necessary. The use of a focused ion beam (FIB) and focused electron beam (FEB) with a gas injection system (GIS) allows th...
Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in w...
The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET...
Electron emission (EE) from real metal surfaces occurring during sliding contact with a polytetrafluoroethylene (PTFE) rider has been investigated using the thermodynamic data of metal oxides and the X-ray photoelectron spectroscopy (XPS) intensity r...
We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffra...
To give consideration to both chip density and device performance, an In0.53Ga0.47As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and an In0.52Al0.48As-block (VPB-EHBTFET) is introduced and systematic...
Temperature (T) dependent conductance G=G(T) data measured in molecular junctions are routinely taken as evidence for a two-step hopping mechanism. The present paper emphasizes that this is not necessarily the case. A curve of lnG versus 1/T decreasi...
Cracks in a tunnel lining often emerge under the coupling action of earth and water pressures in a complex stratum environment, and accidents often occur in the process of repairing cracks. In this study, we used the force-sensitive properties of emb...
The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry of electron tunneling as given by the tunneling electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunnel...
In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hol...
The use of focused ion and focused electron beam (FIB/FEB) technology permits the fabrication of micro- and nanometer scale geometries. Therefore, FIB/FEB technology is a favorable technique for preparing TEM lamellae, nanocontacts, or nanowires and...
Perpendicular magnetic tunnel junctions provide a technologically important design platform for studying metal-insulator-metal heterostructure materials. Accurate characterization of the sensitivity of their electronic structure to proximity coupling...
Various intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction betwe...
Recent theoretical investigations have revealed unconventional transport mechanisms within high Brillouin zones of two-dimensional superlattices. Electrons can navigate along channels we call superwires, gently guided without brute force confinement....
In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered t...
The interaction of excitons with localized surface plasmons in hybrid nanostructures containing semiconductor quantum dots and metal nanoparticles, under specific conditions, may generate products with collective optical properties that have an abund...
Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluate...
We study field effect nanotransistor devices in the Si/SiO2 material system which are based on lateral resonant tunneling between two parallel conduction channels. After introducing a simple piecewise linear potential model, we calculate the quantum...
At low temperature, methyl groups act as hindered quantum rotors exhibiting rotational quantum tunneling, which is highly sensitive to a local methyl group environment. Recently, we observed this effect using pulsed electron paramagnetic resonance (E...
We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaOx tunnel barrier in Fe/GaOx/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with...
In this study, the B3LYP hybrid density functional theory was used to investigate the electromechanical characteristics of C70 fullerene with and without point charges to model the effect of the surface of the gate electrode in a C70 single-electron...
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D...
Gas control and extraction are essential for energy use and sustainable development. In order to study the gas diffusion and transportation law of high-gas tunnels after excavation and blasting and the influence of ventilation on gas concentration, a...
In this paper, the effect of early curing temperature on the tunnel fire resistance of self-compacting concrete (SCC) coated with aerogel cement paste (ACP) was studied. The physical properties in terms of the compressive strength, flexural strength,...
The effect of an external electric field and dissipative tunneling on the spectral intensity of recombination radiation in a quantum dot with an A+ + e impurity complex (a hole localized on a neutral acceptor interacting with an electron localized in...
A new hypothesis for the mechanism of olfaction is presented. It begins with an odorant molecule binding to an olfactory receptor. This is followed by the quantum biology event of inelastic electron tunneling as has been suggested with both the vibra...
Tunnel-type Na0.44MnO2 is extensively regarded as an appealing cathode for sodium-ion batteries due to its cost-effectiveness and excellent cycling performance. However, low theoretical capacity, resulting from insufficient Na+ storage sites, hinders...
In this study, a model of a double-quantum-dot system driven by two-mode microwave photons is presented. The quantum master equation is derived from the system’s Hamiltonians, and the expression for the steady-state current is obtained. Electro...
The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of...
Charge transport across proteins can be surprisingly efficient over long distances—so-called long-range tunneling—but it is still unclear as to why and under which conditions (e.g., presence of co-factors, type of cargo) the long-range tu...
C2N-ring-based molecular chains were designed at the molecular level and theoretically demonstrated to show distinctive and valuable electron transport properties that were superior to the parent carbonaceous system and other similar nanoribbon-based...
Van der Waals heterojunctions, formed by stacking two-dimensional materials with various structural and electronic properties, opens a new way to design new functional devices for future applications and provides an ideal research platform for explor...
In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the perform...
Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including gian...
This article is not a review in the conventional sense. Rather, it is a monographic study of the implications of detection in Al-Cu-Fe quasicrystals of the electronic heat capacity contributions associated with the two-level electron excitations. Our...
Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed in the nanoscale channel of silicon transistors, were analyzed both experimentally and theoretically. Single electron transistors (SET) made in a SOI-FE...
In this research study, the effects of different parameters on the electron transfer rate from three quantum dots (QDs), CdSe, CdS, and CdTe, on three metal oxides (MOs), TiO2, SnO2, and SnO2, in quantum-dot-sensitized solar cells (QDSSCs) with porou...
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electroni...
Formation of gold nanosized particles supported by aluminum oxide film grown on Mo(110) substrate and oxidation of carbon monoxide molecules on their surface have been in-situ studied in ultra-high vacuum by means of Auger electron spectroscopy (AES)...
Reverse electron transfer in mitochondrial complex II (CII) plays an important role in hypoxia/anoxia, in particular, in ischemia, when the blood supply to an organ is disrupted and oxygen is not available. A computational model of CII was developed...
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), a...
Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or dep...
The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-form...
In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analy...
It is shown that a simple metal–oxide–semiconductor (MOS) structure with highly doped silicon substrate can exhibit current–voltage hysteresis effects related to sudden rises and drops in the flowing electric current. Experimental c...
Many intelligent transportation system applications require accurate, reliable, and continuous vehicle positioning. How to achieve such positioning performance in extended GPS-denied environments such as tunnels is the main challenge for land vehicl...
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