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Article

Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation

1
Device Modelling Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
2
Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(2), 204; https://doi.org/10.3390/mi11020204
Received: 22 January 2020 / Revised: 12 February 2020 / Accepted: 13 February 2020 / Published: 16 February 2020
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel module for the direct Source-to-Drain tunneling (S/D tunneling), and its verification in the simulation of Double-Gate Silicon-On-Insulator (DGSOI) transistors and FinFETs. Compared to ballistic Non-Equilibrium Green’s Function (NEGF) simulations, our results show accurate I D vs. V G S and subthreshold characteristics for both devices. Besides, we investigate the impact of the effective masses extracted Density Functional Theory (DFT) simulations, showing that they are the key of not only the general thermionic emission behavior of simulated devices, but also the electron probability of experiencing tunneling phenomena. View Full-Text
Keywords: direct source-to-drain tunneling; transport effective mass; confinement effective mass; multi-subband ensemble Monte Carlo; non-equilibrium Green’s function; DGSOI; FinFET direct source-to-drain tunneling; transport effective mass; confinement effective mass; multi-subband ensemble Monte Carlo; non-equilibrium Green’s function; DGSOI; FinFET
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MDPI and ACS Style

Medina-Bailon, C.; Carrillo-Nunez, H.; Lee, J.; Sampedro, C.; Padilla, J.L.; Donetti, L.; Georgiev, V.; Gamiz, F.; Asenov, A. Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation. Micromachines 2020, 11, 204. https://doi.org/10.3390/mi11020204

AMA Style

Medina-Bailon C, Carrillo-Nunez H, Lee J, Sampedro C, Padilla JL, Donetti L, Georgiev V, Gamiz F, Asenov A. Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation. Micromachines. 2020; 11(2):204. https://doi.org/10.3390/mi11020204

Chicago/Turabian Style

Medina-Bailon, Cristina, Hamilton Carrillo-Nunez, Jaehyun Lee, Carlos Sampedro, Jose L. Padilla, Luca Donetti, Vihar Georgiev, Francisco Gamiz, and Asen Asenov. 2020. "Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation" Micromachines 11, no. 2: 204. https://doi.org/10.3390/mi11020204

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