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Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers

1
Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
2
Computer Teaching and Researching Section, Shenyang Conservatory of Music, Shenyang 110818, China
3
Suzhou Institute of Biomedical, Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China
4
Northeastern Institute of Metal Materials Co., Ltd., Shenyang 110108, China
*
Author to whom correspondence should be addressed.
Materials 2018, 11(5), 721; https://doi.org/10.3390/ma11050721
Received: 14 April 2018 / Revised: 27 April 2018 / Accepted: 28 April 2018 / Published: 3 May 2018
(This article belongs to the Special Issue Highly Ordered Organic Thin Films)
Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance, have been observed in organic spintronics. Significant progress has been made in understanding spin-dependent transport phenomena, such as spin injection or tunneling, manipulation, and detection in organic spintronics. However, to date, materials that are effective for preparing organic spin devices for commercial applications are still lacking. In this report, we introduce basic knowledge of the fabrication and evaluation of organic spin devices, and review some remarkable applications for organic spin valves using molecular spacers. The current bottlenecks that hinder further enhancement for the performance of organic spin devices is also discussed. This report presents some research ideas for designing organic spin devices operated at room temperature. View Full-Text
Keywords: organic spintronics; organic semiconductors; magnetoresistance effect; organic spin valves organic spintronics; organic semiconductors; magnetoresistance effect; organic spin valves
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MDPI and ACS Style

Yao, X.; Duan, Q.; Tong, J.; Chang, Y.; Zhou, L.; Qin, G.; Zhang, X. Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers. Materials 2018, 11, 721. https://doi.org/10.3390/ma11050721

AMA Style

Yao X, Duan Q, Tong J, Chang Y, Zhou L, Qin G, Zhang X. Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers. Materials. 2018; 11(5):721. https://doi.org/10.3390/ma11050721

Chicago/Turabian Style

Yao, Xiannian; Duan, Qingqing; Tong, Junwei; Chang, Yufang; Zhou, Lianqun; Qin, Gaowu; Zhang, Xianmin. 2018. "Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers" Materials 11, no. 5: 721. https://doi.org/10.3390/ma11050721

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