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43 Results Found

  • Article
  • Open Access
1,279 Views
15 Pages

Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs

  • Marcello Cioni,
  • Giacomo Cappellini,
  • Giovanni Giorgino,
  • Alessandro Chini,
  • Antonino Parisi,
  • Cristina Miccoli,
  • Maria Eloisa Castagna,
  • Aurore Constant and
  • Ferdinando Iucolano

In this paper, the impact of SiN passivation on dynamic-RON degradation of AlGaN/GaN HEMTs devices is put in evidence. To this end, samples showing different SiN passivation stoichiometry are considered, labeled as Sample A and Sample B. For dynamic-...

  • Article
  • Open Access
375 Views
11 Pages

Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation

  • Lorenzo Modica,
  • Nicolò Zagni,
  • Marcello Cioni,
  • Giacomo Cappellini,
  • Giovanni Giorgino,
  • Ferdinando Iucolano,
  • Giovanni Verzellesi and
  • Alessandro Chini

3 December 2025

This paper presents the electrical characterization of the on-resistance (RON) of on-wafer 100 V p-GaN power High-Electron-Mobility Transistors (HEMTs). This study assesses device degradation in the context of a monolithically integrated half-bridge...

  • Article
  • Open Access
3 Citations
3,498 Views
8 Pages

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

  • Hsiang-Chun Wang,
  • Chia-Hao Liu,
  • Chong-Rong Huang,
  • Hsien-Chin Chiu,
  • Hsuan-Ling Kao and
  • Xinke Liu

A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resi...

  • Article
  • Open Access
6 Citations
3,909 Views
11 Pages

Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions

  • Alessio Alemanno,
  • Alberto Santarelli,
  • Enrico Sangiorgi and
  • Corrado Florian

13 February 2023

High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the development of high-efficiency switching-mode power converters at high commutation frequency. Nonetheless, GaN devices are prone to charge-trapping effects th...

  • Article
  • Open Access
6 Citations
2,442 Views
12 Pages

A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes

  • Alessio Alemanno,
  • Alberto Maria Angelotti,
  • Gian Piero Gibiino,
  • Alberto Santarelli,
  • Enrico Sangiorgi and
  • Corrado Florian

20 February 2023

Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradation of power converter efficiency due to modulation of the effective dynamic ON-resistance (RON) with respect to its static value. Dynamic RON degradatio...

  • Article
  • Open Access
2 Citations
2,568 Views
13 Pages

Dynamic on-resistance (RON) of commercial GaN on Si normally off high-electron-mobility transistor (HEMT) devices is a very important parameter because it is responsible for conduction losses that limit the power conversion efficiency of high-power s...

  • Article
  • Open Access
27 Citations
7,474 Views
9 Pages

The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic RON with off-state voltage ranging from 50 to 400 V is ascribed to th...

  • Article
  • Open Access
13 Citations
3,715 Views
12 Pages

Mechanistic Insight into Permeation of Plasma-Generated Species from Vacuum into Water Bulk

  • Jamoliddin Razzokov,
  • Sunnatullo Fazliev,
  • Akbar Kodirov,
  • Pankaj AttrI,
  • Zhitong Chen and
  • Masaharu Shiratani

Due to their potential benefits, cold atmospheric plasmas (CAPs), as biotechnological tools, have been used for various purposes, especially in medical and agricultural applications. The main effect of CAP is associated with reactive oxygen and nitro...

  • Review
  • Open Access
1,387 Views
21 Pages

RON Receptor Signaling and the Tumor Microenvironment

  • Emily Wachter,
  • Levi H. Fox,
  • Zhixin Lu,
  • Angelle D. Jones,
  • Nicholas D. Casto and
  • Susan E. Waltz

6 April 2025

The immune microenvironment plays a critical role in tumor growth and development. Immune activation within the tumor microenvironment is dynamic and can be modulated by tumor intrinsic and extrinsic signaling. The RON receptor tyrosine kinase is can...

  • Feature Paper
  • Article
  • Open Access
3 Citations
2,701 Views
14 Pages

Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs

  • Enrique Maset,
  • Pedro Martín-Holgado,
  • Yolanda Morilla,
  • David Gilabert,
  • Esteban Sanchis-Kilders and
  • Pedro J. Martínez

15 November 2022

Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes...

  • Article
  • Open Access
12 Citations
3,311 Views
14 Pages

Unraveling the Transport Properties of RONS across Nitro-Oxidized Membranes

  • Davronjon Abduvokhidov,
  • Maksudbek Yusupov,
  • Aamir Shahzad,
  • Pankaj Attri,
  • Masaharu Shiratani,
  • Maria C. Oliveira and
  • Jamoliddin Razzokov

27 June 2023

The potential of cold atmospheric plasma (CAP) in biomedical applications has received significant interest, due to its ability to generate reactive oxygen and nitrogen species (RONS). Upon exposure to living cells, CAP triggers alterations in variou...

  • Article
  • Open Access
3 Citations
1,957 Views
16 Pages

AdipoRon Alleviates Liver Injury by Protecting Hepatocytes from Mitochondrial Damage Caused by Ionizing Radiation

  • Yi Liu,
  • Yinfen Xu,
  • Huilin Ji,
  • Fenfen Gao,
  • Ruoting Ge,
  • Dan Zhou,
  • Hengyi Fu,
  • Xiaodong Liu and
  • Shumei Ma

20 October 2024

Radiation liver injury is a common complication of hepatocellular carcinoma radiotherapy. It is mainly caused by irreversible damage to the DNA of hepatocellular cells directly by radiation, which seriously interferes with metabolism and causes cell...

  • Review
  • Open Access
30 Citations
9,365 Views
21 Pages

29 March 2023

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, large...

  • Article
  • Open Access
25 Citations
6,878 Views
14 Pages

10 October 2018

Citizen science has become a major source of scientific research in recent years. Many studies have concluded that citizen science projects not only contribute to the sciences but also considerably improve the scientific and environmental literacy of...

  • Article
  • Open Access
9 Citations
2,802 Views
25 Pages

13 May 2022

The Research Octane Number (RON) is a key quality parameter for gasoline, obtained offline through complex, time-consuming, and expensive standard methods. Measurements are usually only available a few times per week and after long delays, making pro...

  • Article
  • Open Access
1 Citations
2,987 Views
11 Pages

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

  • Martin Doublet,
  • Nicolas Defrance,
  • Etienne Okada,
  • Loris Pace,
  • Thierry Duquesne,
  • Bouyssou Emilien,
  • Arnaud Yvon,
  • Nadir Idir and
  • Jean-Claude De Jaeger

In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversi...

  • Review
  • Open Access
17 Citations
3,744 Views
42 Pages

Effects of Nitro-Oxidative Stress on Biomolecules: Part 1—Non-Reactive Molecular Dynamics Simulations

  • Maryam Ghasemitarei,
  • Tayebeh Ghorbi,
  • Maksudbek Yusupov,
  • Yuantao Zhang,
  • Tong Zhao,
  • Parisa Shali and
  • Annemie Bogaerts

11 September 2023

Plasma medicine, or the biomedical application of cold atmospheric plasma (CAP), is an expanding field within plasma research. CAP has demonstrated remarkable versatility in diverse biological applications, including cancer treatment, wound healing,...

  • Article
  • Open Access
23 Citations
3,511 Views
17 Pages

Insight into the Impact of Oxidative Stress on the Barrier Properties of Lipid Bilayer Models

  • Zahra Nasri,
  • Mohsen Ahmadi,
  • Johanna Striesow,
  • Mehdi Ravandeh,
  • Thomas von Woedtke and
  • Kristian Wende

As a new field of oxidative stress-based therapy, cold physical plasma is a promising tool for several biomedical applications due to its potential to create a broad diversity of reactive oxygen and nitrogen species (RONS). Although proposed, the imp...

  • Article
  • Open Access
3 Citations
3,940 Views
10 Pages

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

  • Xiaochuan Deng,
  • Rui Liu,
  • Songjun Li,
  • Ling Li,
  • Hao Wu and
  • Xuan Li

22 November 2021

A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehens...

  • Article
  • Open Access
23 Citations
4,171 Views
15 Pages

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

  • Pedro J. Martínez,
  • Enrique Maset,
  • Pedro Martín-Holgado,
  • Yolanda Morilla,
  • David Gilabert and
  • Esteban Sanchis-Kilders

28 August 2019

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where...

  • Article
  • Open Access
1 Citations
1,690 Views
12 Pages

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion

  • Lili Zhai,
  • Xiangdong Li,
  • Jian Ji,
  • Lu Yu,
  • Liang Chen,
  • Yaoming Chen,
  • Haonan Xia,
  • Zhanfei Han,
  • Junbo Wang and
  • Jincheng Zhang
  • + 4 authors

The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices. This paper focuses on research on high-efficiency and high-reliability low-voltage p-...

  • Article
  • Open Access
1 Citations
1,206 Views
14 Pages

Charge carrier traps due to crystal defects in GaN on Si HEMT devices are responsible for dynamic performance degradation, long-term reliability limitations, and peculiar failure modes. The behavior of traps depends on many variables including hetero...

  • Article
  • Open Access
19 Citations
5,850 Views
10 Pages

17 June 2020

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off...

  • Feature Paper
  • Article
  • Open Access
15 Citations
14,415 Views
26 Pages

Study of Industrial Naphtha Catalytic Reforming Reactions via Modelling and Simulation

  • Aminu Zakari Yusuf,
  • B. O. Aderemi,
  • Raj Patel and
  • Iqbal M. Mujtaba

2 April 2019

Steady state and dynamic modelling and simulation of catalytic reforming unit of Kaduna Refining & Petrochemical Company, NNPC (Nigeria) was carried to find out the behaviour of the reactions under both steady and unsteady state conditions. The b...

  • Article
  • Open Access
5 Citations
3,351 Views
10 Pages

10 June 2023

In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA...

  • Article
  • Open Access
2 Citations
2,823 Views
7 Pages

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

  • Hsiang-Chun Wang,
  • Chia-Hao Liu,
  • Chong-Rong Huang,
  • Min-Hung Shih,
  • Hsien-Chin Chiu,
  • Hsuan-Ling Kao and
  • Xinke Liu

13 May 2022

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but...

  • Article
  • Open Access
1 Citations
2,777 Views
12 Pages

21 October 2023

A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performan...

  • Article
  • Open Access
3 Citations
3,561 Views
11 Pages

Assessing Curcumin Uptake and Clearance and Their Influence on Superoxide Dismutase Activity in Drosophila melanogaster

  • Tammy R. Hoffman,
  • Sarah A. Emsley,
  • Jenna C. Douglas,
  • Kaela R. Reed,
  • Abigail R. Esquivel,
  • Marc J. Koyack,
  • Brie E. Paddock and
  • Patrick Videau

8 September 2023

While normal levels of reactive oxygen and nitrogen species (RONS) are required for proper organismal function, increased levels result in oxidative stress. Oxidative stress may be managed via the scavenging activities of antioxidants (e.g., curcumin...

  • Article
  • Open Access
2 Citations
3,136 Views
11 Pages

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

  • Jingwei Guo,
  • Shengdong Hu,
  • Ping Li,
  • Jie Jiang,
  • Ruoyu Wang,
  • Yuan Wang and
  • Hao Wu

18 March 2022

In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer...

  • Article
  • Open Access
1 Citations
2,838 Views
9 Pages

14 May 2020

A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiN...

  • Article
  • Open Access
9 Citations
4,094 Views
15 Pages

11 November 2020

In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenche...

  • Article
  • Open Access
7 Citations
5,004 Views
10 Pages

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

  • Yuan Lin,
  • Min-Lu Kao,
  • You-Chen Weng,
  • Chang-Fu Dee,
  • Shih-Chen Chen,
  • Hao-Chung Kuo,
  • Chun-Hsiung Lin and
  • Edward-Yi Chang

3 December 2022

Substrate voltage (VSUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be...

  • Review
  • Open Access
15 Citations
12,778 Views
18 Pages

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

  • Lin-Qing Zhang,
  • Xiao-Li Wu,
  • Wan-Qing Miao,
  • Zhi-Yan Wu,
  • Qian Xing and
  • Peng-Fei Wang

10 June 2022

AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the devic...

  • Article
  • Open Access
230 Views
23 Pages

Mild Ozone-Induced Oxidative Stress Modulates the Activity and Viability of Porcine Neutrophils and Monocytes

  • Dominika Nguyen Ngoc,
  • Jose Luis Valverde Piedra,
  • Andrzej Milczak,
  • Tomasz Szponder,
  • Beata Drzewiecka,
  • Aleksandra Pyzerska,
  • Małgorzata Kowalczyk,
  • Mateusz Fila,
  • Ewa Tomaszewska and
  • Joanna Wessely-Szponder
  • + 1 author

8 January 2026

Ozone (O3) is a reactive oxidant increasingly applied in biomedical settings, yet its dose-dependent effects on innate immune cells, particularly those from non-human species, remain insufficiently defined. Within a One Health framework, this study e...

  • Article
  • Open Access
2 Citations
3,146 Views
14 Pages

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network

  • Xiping Niu,
  • Ling Sang,
  • Xiaoling Duan,
  • Shijie Gu,
  • Peng Zhao,
  • Tao Zhu,
  • Kaixuan Xu,
  • Yawei He,
  • Zheyang Li and
  • Rui Jin
  • + 1 author

31 December 2024

The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation method...

  • Article
  • Open Access
509 Views
20 Pages

Aging Stability and Radical Activity of Plasma-Activated Water Treated in Liquid- and Gas-Phase Reactors

  • Ivan Karlo Cingesar,
  • Višnja Stulić,
  • Franka Markić,
  • Senada Muratović,
  • Mia Kurek,
  • Zoran Herceg,
  • Nadica Maltar-Strmečki and
  • Tomislava Vukušić Pavičić

28 November 2025

Plasma-activated water (PAW) is a liquid enriched with reactive oxygen and nitrogen species (RONS), which impart antimicrobial and bioactive properties. In this study, PAW generated in liquid or gas phase under nitrogen or oxygen atmospheres was char...

  • Article
  • Open Access
5 Citations
2,931 Views
22 Pages

Conceptualising a Hybrid Flying and Diving Craft

  • Keith F. Joiner and
  • Ahmed A. Swidan

This paper introduces the conceptual design of a submersible seaplane that merges the maturity of the wing-in-ground (WIG or ekranoplan) crafts and seaplanes with covert hybrid underwater insertion, travel, and recovery. WIG crafts have a higher lift...

  • Article
  • Open Access
1 Citations
1,725 Views
21 Pages

Modelling sea conditions is a complex task that requires a comprehensive analysis, considering various influencing factors. Observed and unobserved factors jointly play a role in the definition of sea conditions. Here, we consider finite mixtures of...

  • Feature Paper
  • Article
  • Open Access
1 Citations
2,600 Views
29 Pages

30 March 2025

Financial stability analysis requires volatility modeling, especially in emerging nations where pension fund systems are very vulnerable to macrofinancial risks. In order to examine the volatility dynamics of Romania’s private pension system, t...

  • Review
  • Open Access
4 Citations
3,161 Views
23 Pages

Optimizing physical training regimens to increase muscle aerobic capacity requires an understanding of the internal processes that occur during exercise that initiate subsequent adaptation. During exercise, muscle cells undergo a series of metabolic...

  • Article
  • Open Access
2,779 Views
30 Pages

Statistical Analysis and Forecasts of Performance Indicators in the Romanian Healthcare System

  • Cristian Ovidiu Drăgan,
  • Laurențiu Stelian Mihai,
  • Ana-Maria Camelia Popescu,
  • Ion Buligiu,
  • Lucian Mirescu and
  • Daniel Militaru

Background/Objectives: Globally, healthcare systems face challenges in optimizing performance, particularly in the wake of the COVID-19 pandemic. This study focuses on the analysis and forecasting of key performance indicators (KPIs) for the County E...

  • Article
  • Open Access
19 Citations
2,911 Views
25 Pages

10 March 2022

By harnessing gasoline’s low reactivity for partially premixed combustion promotion, gasoline compression ignition (GCI) combustion shows the potential to produce markedly improved NOx-soot trade-off with high fuel efficiency compared to conven...

  • Article
  • Open Access
1 Citations
1,143 Views
29 Pages

Thymoquinone Protective Effect Against Mercury-Induced Reproductive Derangement in Rats: In Vivo and In Silico Investigation

  • Solomon Owumi,
  • Moses Otunla,
  • Pelumi Akindipe,
  • Uche Arunsi,
  • Jesutosin O. Babalola,
  • Chioma E. Irozuru,
  • Ahmad Altayyar,
  • Bayode Oluwawibe,
  • Olatunde Owoeye and
  • Adegboyega K. Oyelere

19 October 2025

Mercury exposure has been linked to male infertility. Given that mercury chloride (HgCl2) may promote an oxido-inflammatory milieu associated with pathophysiological derangements, it is hypothesised that Thymoquinone (TQ), an antioxidant and anti-inf...