- Article
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs
- Marcello Cioni,
- Giacomo Cappellini,
- Giovanni Giorgino,
- Alessandro Chini,
- Antonino Parisi,
- Cristina Miccoli,
- Maria Eloisa Castagna,
- Aurore Constant and
- Ferdinando Iucolano
In this paper, the impact of SiN passivation on dynamic-RON degradation of AlGaN/GaN HEMTs devices is put in evidence. To this end, samples showing different SiN passivation stoichiometry are considered, labeled as Sample A and Sample B. For dynamic-...