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The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

1
Department of Electronics Engineering, Chang Gung University, Taoyuan City 33302, Taiwan
2
Innovation Technology Research Center, GlobalWafers Co., Ltd., Hsinchu City 300091, Taiwan
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(6), 570; https://doi.org/10.3390/coatings10060570
Received: 20 May 2020 / Revised: 11 June 2020 / Accepted: 12 June 2020 / Published: 17 June 2020
(This article belongs to the Section Surface Characterization, Deposition and Modification)
In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications. View Full-Text
Keywords: GaN; HEMT; microwave device; AlGaN back barrier GaN; HEMT; microwave device; AlGaN back barrier
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MDPI and ACS Style

Wang, H.; Chiu, H.; Hsu, W.; Liu, C.; Chuang, C.; Liu, J.; Huang, Y. The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate. Coatings 2020, 10, 570.

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