- Article
Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM
- Jiwon Kim,
- Inkook Hwang,
- Byungwook Kim,
- Wookyung Lee,
- Juha Song,
- Yeonwoong Jung and
- Changbun Yoon
Dynamic random-access memory (DRAM) is a vital component in modern computing systems. Enhancing memory performance requires maximizing capacitor capacitance within DRAM cells, which is achieved using high-k dielectric materials deposited as thin, uni...