Next Article in Journal
Detection of NOx in Combustion Engine Exhaust Gas by Applying the Pulsed Polarization Technique on YSZ Based Sensors
Previous Article in Journal
Integration of Silica Aerogels in Microfluidic Chips
Open AccessProceedings

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

Nanoelectronic Devices Laboratory, EPFL, CH-1015 Lausanne, Switzerland
*
Author to whom correspondence should be addressed.
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Proceedings 2017, 1(4), 391; https://doi.org/10.3390/proceedings1040391
Published: 9 August 2017
(This article belongs to the Proceedings of Eurosensors)
This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 times and the motional resistance decreases by ×12 times in comparison with its counterpart in air. An improvement by a factor of ×5.6 in the Signal-To-Noise Ratio (SNR) for DC bias up to ×2.8 lower is accomplished by performing a piezoresistive detection instead of capacitive detection. Quality factor (Q) of 11,350 and motional resistances (Rm) of 926 Ω have been achieved for Parallel Beam Resonators (PBR) vibrating at 22.231 MHz. For the first time, ALD HfO2 partially-filled-gap MEMS resonators are proven to achieve inertial distributed mass sensitivities of the order of 4.28 kHz/pg for beam-type and 1.8k Hz/pg for disk resonators.
Keywords: micromechanical resonator; MEMS resonator; MEMS; microsystems; microfabrication; silicon on insulator; quality factor; resonance frequency; mass sensing; mass sensor; Atomic Layer Deposition (ALD); high-k dielectric; hafnium oxide micromechanical resonator; MEMS resonator; MEMS; microsystems; microfabrication; silicon on insulator; quality factor; resonance frequency; mass sensing; mass sensor; Atomic Layer Deposition (ALD); high-k dielectric; hafnium oxide
MDPI and ACS Style

Lopez, M.M.; Casu, E.A.; Fernandez-Bolanos, M.; Ionescu, A.M. Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing. Proceedings 2017, 1, 391.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map

1
Back to TopTop