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Open AccessArticle

Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method

1
Institute of Metallurgy and Materials Science PAS, Reymonta 25, 30-059 Krakow, Poland
2
CBRTP—Research and Development Center of Technology for Industry, Ludwika Waryńskiego 3A, 00-645 Warszawa, Poland
3
Institute of Catalysis and Surface Chemistry PAS, Niezapominajek 8, 30-239 Krakow, Poland
4
Center of Teaching Technical and Natural Sciences, University of Rzeszow, Pigonia 1, 35-959 Rzeszow, Poland
*
Author to whom correspondence should be addressed.
Academic Editor: Antonio Bartolomeo
Materials 2021, 14(4), 1038; https://doi.org/10.3390/ma14041038
Received: 27 January 2021 / Revised: 16 February 2021 / Accepted: 18 February 2021 / Published: 22 February 2021
(This article belongs to the Section Thin Films)
In this work, we present the results of defects analysis concerning ZnO and Al2O3 layers deposited by atomic layer deposition (ALD) technique. The analysis was performed by the X-band electron paramagnetic resonance (EPR) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) methods. The layers were either tested as-deposited or after 30 min heating at 300 °C and 450 °C in Ar atmosphere. TEM and XPS investigations revealed amorphous nature and non-stoichiometry of aluminum oxide even after additional high-temperature treatment. EPR confirmed high number of defect states in Al2O3. For ZnO, we found the as-deposited layer shows ultrafine grains that start to grow when high temperature is applied and that their crystallinity is also improved, resulting in good agreement with XPS results which indicated lower number of defects on the layer surface. View Full-Text
Keywords: semiconductor-insulator interfaces; interface phenomena; Al2O3/ZnO double layer; heterojunction solar cell; ALD; defects analysis; EPR semiconductor-insulator interfaces; interface phenomena; Al2O3/ZnO double layer; heterojunction solar cell; ALD; defects analysis; EPR
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MDPI and ACS Style

Gawlińska-Nęcek, K.; Wlazło, M.; Socha, R.; Stefaniuk, I.; Major, Ł.; Panek, P. Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method. Materials 2021, 14, 1038. https://doi.org/10.3390/ma14041038

AMA Style

Gawlińska-Nęcek K, Wlazło M, Socha R, Stefaniuk I, Major Ł, Panek P. Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method. Materials. 2021; 14(4):1038. https://doi.org/10.3390/ma14041038

Chicago/Turabian Style

Gawlińska-Nęcek, Katarzyna; Wlazło, Mateusz; Socha, Robert; Stefaniuk, Ireneusz; Major, Łukasz; Panek, Piotr. 2021. "Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method" Materials 14, no. 4: 1038. https://doi.org/10.3390/ma14041038

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