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Article

Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments

1
Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland
2
Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland
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Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland
4
VTT Technical Research Centre of Finland, Biologinkuja 5, Espoo, P.O. Box 1000, FI-02044 VTT, Espoo, Finland
5
Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014, Jyväskylä, Finland, [email protected]
*
Authors to whom correspondence should be addressed.
Current address: Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
Materials 2019, 12(19), 3212; https://doi.org/10.3390/ma12193212
Received: 15 July 2019 / Revised: 20 September 2019 / Accepted: 26 September 2019 / Published: 30 September 2019
(This article belongs to the Special Issue Novel Thin Films: Electrical and Optical Properties)
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures ≥400 °C and annealing time ≥2 h, and 1:1 stoichiometry was obtained when annealed at 500 °C for 4 h. ZnS crystallized into small crystallites (1–7 nm) with cubic sphalerite structure, which remained stable under the applied annealing conditions. The size of the crystallites (D) tended to decrease with annealing temperature, in agreement with the EDS data (decreased content of both S and Zn with annealing temperature); the D for samples annealed at 600 °C (for the time ≤2 h) was always the smallest. Both reflectivity and ellipsometric spectra showed characteristics typical for quantum confinement (distinct dips/peaks in UV spectral region). It can thus be concluded that the amorphous ZnS layer obtained at a relatively low temperature (150 °C) from organic S precursor transformed into the layers built of small ZnS nanocrystals of cubic structure after annealing at a temperature range of 300–600 °C under Ar atmosphere. View Full-Text
Keywords: atomic layer deposition (ALD); ZnS thin films; annealing; optical properties atomic layer deposition (ALD); ZnS thin films; annealing; optical properties
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MDPI and ACS Style

Włodarski, M.; Chodorow, U.; Jóźwiak, S.; Putkonen, M.; Durejko, T.; Sajavaara, T.; Norek, M. Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments. Materials 2019, 12, 3212. https://doi.org/10.3390/ma12193212

AMA Style

Włodarski M, Chodorow U, Jóźwiak S, Putkonen M, Durejko T, Sajavaara T, Norek M. Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments. Materials. 2019; 12(19):3212. https://doi.org/10.3390/ma12193212

Chicago/Turabian Style

Włodarski, Maksymilian, Urszula Chodorow, Stanisław Jóźwiak, Matti Putkonen, Tomasz Durejko, Timo Sajavaara, and Małgorzata Norek. 2019. "Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments" Materials 12, no. 19: 3212. https://doi.org/10.3390/ma12193212

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