To address the low energy conversion efficiency and weak mechanical strength of In
2O
3 thermoelectric materials for Aiye Processing Equipment, this study systematically investigated the regulatory effects and mechanisms of Ce doping on In
2O
3’s thermoelectric and mechanical
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To address the low energy conversion efficiency and weak mechanical strength of In
2O
3 thermoelectric materials for Aiye Processing Equipment, this study systematically investigated the regulatory effects and mechanisms of Ce doping on In
2O
3’s thermoelectric and mechanical properties via experiments. In
2O
3 samples with varying Ce contents were prepared, and property-microstructure correlations were analyzed through electrical/thermal transport tests, Vickers hardness measurements, and crystal structure characterization. Results show Ce doping synergistically optimizes In
2O
3 properties through multiple mechanisms. For thermoelectric performance, Ce
4+ regulates carrier concentration and mobility, enhancing electrical conductivity and power factor. Meanwhile, lattice distortion from Ce-In atomic size differences strengthens phonon scattering, reducing lattice and total thermal conductivity. These effects boost the maximum ZT from 0.055 (pure In
2O
3) to 0.328 at 973 K obtained by
x = 0.0065, improving energy conversion efficiency significantly. For mechanical properties, Ce doping enhances Vickers hardness and plastic deformation resistance via solid solution strengthening (lattice distortion hinders dislocations), microstructure densification (reducing vacancies/pores), Ce-O bond strengthening, and defect pinning. This study confirms Ce doping as an effective strategy for simultaneous optimization of In
2O
3’s thermoelectric and mechanical properties, providing experimental/theoretical support for oxide thermoelectric material development and valuable references for their medium-low temperature energy recovery applications.
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