- Article
Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films
- Nobuo Sasaki,
- Satoshi Takayama,
- Rikuto Sasai and
- Yukiharu Uraoka
Isotropic TFT characteristics are realized in the {100}-oriented grain-boundary-free 60 nm thick Si film obtained by the continuous-wave laser lateral crystallization, where the grain- and sub-boundaries are defined as the crystallographic boundaries...