This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen va...
Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the ma...
Due to its excellent physical properties and availability directly on a semiconductor substrate, epitaxial graphene (EG) grown on the (0001) face of hexagonal silicon carbide is a material of choice for advanced applications in electronics, metrology...
In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the op...
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory...
This paper proposes a 1200V 4H-SiC MOSFET incorporating a High-K dielectric-integrated fused source-gate (HKSG) structure, engineered to concurrently enhance the third-quadrant operation and high-frequency figure of merit (HF-FOM). The High-K dielect...
The recent developments in the replacement of bulk MOSFETs with high-performance semiconductor devices create new opportunities in attaining the best device configuration with drive current, leakage current, subthreshold swing, Drain-Induced Barrier...
Q-factor is a reasonable index to investigate the integrity of circuits or devices in terms of their energy or charge storage capabilities. We use this figure of merit to explore the deposition quality of nano-node high-k gate dielectrics by decouple...
Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, pro...
This work primarily focuses on the degradation degree of bulk current (IB) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the...
Electrohydrodynamic (EHD) jet printing is known as a versatile method to print a wide viscosity range of materials that are impossible to print by conventional inkjet printing. Hence, with the understanding of the benefits of EHD jet printing, soluti...
The application of micro-Raman spectroscopy was used for characterization of structural features of the high-k stack (h-k) layer of “silicon-on-insulator” (SOI) nanowire (NW) chip (h-k-SOI-NW chip), including Al2O3 and HfO2 in various combinations af...
Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constr...
This paper presents an advanced dielectric engineering approach utilizing a composition-dependent hafnium zirconium oxide (Hf1-xZrxO2) superlattice (SL) structure for Si nanosheet gate-all-around field-effect transistors (Si NSGAAFETs). The dielectri...
Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-sca...
In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressi...
Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. In this work, we demonstrate how engineering the dielectric layer...
Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-di...
In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT). All the electrical properties of In2...
Calcium ions (Ca2+) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca2+ detection, which comprises a dual-gate...
The accurate characterization of nanolayered systems is an essential topic for today’s developments in many fields of material research. Thin high-k layers and gate stacks are technologically required for the design of current and future electronic d...
High-k metal oxides are gradually replacing the traditional SiO2 dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution meth...
We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of differ...
This study developed a DC-free technique that used dark-mode scanning capacitance microscopy (DM-SCM) with a small-area contact electrode to evaluate and image equivalent oxide thicknesses (EOTs). In contrast to the conventional capacitance–vol...
A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectr...
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SC...
In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-...
As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—depositi...
The high-k-based MOS-like capacitors are a promising approach for the domain of non-volatile memory devices, which currently is limited by SiO2 technology and cannot face the rapid downsizing of the electronic device trend. In this paper, we prepare...
High-k/n-InAlAs MOS capacitors are popular for the isolated gate of InAs/AlSb and InAlAs/InGaAs high-electron mobility transistors. In this study, a new kind of high-k/n-InAlAs MOS-capacitor with a HfO2–Al2O3 laminated dielectric was successful...
The spray pyrolysis technique has been extensively used to synthesize materials for a wide variety of applications such as micro and sub-micrometer dimension MOSFET´s for integrated circuits technology, light emitting devices for displays, and...
The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant...
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in...
We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials...
In this article, we report the preparation of Al-doped ZrO2 (AZO) thin films by the sol–gel method. The electrical properties, microstructure, and optical properties of AZO high-k gate dielectric films at different annealing temperatures were s...
When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti conten...
In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has bee...
Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and paralle...
A Gate Stack GAA FET using SiGe with a 2 nm gate underlap encapsulating a high-k spacer has been created, explored, and evaluated for improved performance in radio frequency applications. The chip shows significant improvements in electrical and radi...
This study contributes new mineralogical, whole-rock geochemical, and magnetic susceptibility data to the well-established petrogenesis of the Miocene of Limnos volcanic rocks in the Aegean region. The combined examination of volcanic samples from th...
The K+ transporter KT/HAK/KUP (K+ transporter/high-affinity K+/K+ uptake) family has a critical effect on K+ uptake and translocation in plants under different environmental conditions. However, the functional analysis of KT/HAK/KUP members in sweet...
Tungsten (W) fiber-reinforced tungsten (Wf/W) composite with ultra-high strength and high-temperature resistance is considered an attractive candidate material for plasma-facing materials (PFM) in future fusion reactors. The main component of Wf/W co...
A polyvinylidene fluoride (PVDF) film incorporating size-controlled, uniformly dispersed, directly patterned Bi2O3 nanoparticles was developed to achieve a high-k polymer nanocomposite capacitor. The photochemical metal-organic deposition (PMOD) meth...
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the dep...
The newly discovered Magushan Cu-Mo polymetallic deposit, located in southeastern Anhui, eastern China, is a middle-scale skarn-type polymetallic deposit with different ore types of veinlets-disseminated skarn (the primary type), quartz veins, and po...
Voltage-gated K+ channel β subunits act as a structural component of Kin channels in different species. The β subunits are not essential to the channel activity but confer different properties through binding the T1 domain or the C-terminal...
Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on G...
Dielectric elastomer actuators (DEA) are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. Th...
Potassium is an important essential element for plant growth and development. Long-term potassium deprivation can lead to a severe deficiency phenotype in plants. Interestingly, Phytolacca acinosa is a plant with an unusually high potassium content a...
In this study, we propose three k-nearest neighbor (k-NN) optimization techniques for a distributed, in-memory-based, high-dimensional indexing method to speed up content-based image retrieval. The proposed techniques perform distributed, in-memory,...
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