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Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

Consiglio Nazionale delle Ricerche–Istituto per la Microelettronica e Microsistemi, Strada VIII, 5—95121 Catania, Italy
Author to whom correspondence should be addressed.
Received: 25 July 2019 / Revised: 17 August 2019 / Accepted: 27 August 2019 / Published: 2 September 2019
Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on Gr is essential for the implementation of many electronic devices. However, the lack of out-of-plane bonds in the sp2 lattice of Gr typically hinders the direct ALD growth on its surface. To date, several pre-functionalization and/or seed-layer deposition processes have been explored, to promote the ALD nucleation on Gr. The main challenge of these approaches is achieving ultra-thin insulators with nearly ideal dielectric properties (permittivity, breakdown field), while preserving the structural and electronic properties of Gr. This paper will review recent developments of ALD of high k-dielectrics, in particular Al2O3, on Gr with “in-situ” seed-layer approaches. Furthermore, recent reports on seed-layer-free ALD onto epitaxial Gr on SiC and onto Gr grown by chemical vapor deposition (CVD) on metals will be presented, discussing the role played by Gr interaction with the underlying substrates. View Full-Text
Keywords: graphene; atomic layer deposition; electronics graphene; atomic layer deposition; electronics
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MDPI and ACS Style

Schilirò, E.; Lo Nigro, R.; Roccaforte, F.; Giannazzo, F. Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics. C 2019, 5, 53.

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