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Biosensors 2018, 8(3), 72; https://doi.org/10.3390/bios8030072

Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

1
Institute of Biomedical Chemistry (IBMC), Moscow 119121, Russia
2
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
3
Institute of Physics and Technology of Russian Academy of Sciences, Moscow 117218, Russia
4
Joint-Stock Company “Novosibirsk Plant of Semiconductor Devices & DC”, Novosibirsk 630082, Russia
5
Sobolev Institute of Geology and Mineralogy, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
6
Skryabin Moscow State Academy of Veterinary Medicine and Biotechnology, Moscow 109472, Russia
*
Author to whom correspondence should be addressed.
Received: 28 June 2018 / Revised: 23 July 2018 / Accepted: 25 July 2018 / Published: 27 July 2018
(This article belongs to the Special Issue Applications of Raman Techniques in Biosensing)
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Abstract

Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, protected with a layer of high-k dielectric ((h-k)-SOI-NW chip), has been employed for highly sensitive detection of microRNA (miRNA) associated with oncological diseases. The protective dielectric included a 2-nm-thick Al2O3 surface layer and a 8-nm-thick HfO2 layer, deposited onto a silicon SOI-NW chip. Such a chip had increased time stability upon operation in solution, as compared with an unprotected SOI-NW chip with native oxide. The (h-k)-SOI-NW biosensor has been employed for the detection of DNA oligonucleotide (oDNA), which is a synthetic analogue of miRNA-21 associated with oncological diseases. To provide biospecificity of the detection, the surface of (h-k)-SOI-NW chip was modified with oligonucleotide probe molecules (oDVA probes) complementary to the sequence of the target biomolecule. Concentration sensitivity of the (h-k)-SOI-NW biosensor at the level of DL~10−16 M has been demonstrated. View Full-Text
Keywords: silicon-on-insulator; high-k dielectric; nanowire biosensor; micro-Raman spectroscopy; miRNA silicon-on-insulator; high-k dielectric; nanowire biosensor; micro-Raman spectroscopy; miRNA
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Malsagova, K.A.; Pleshakova, T.O.; Kozlov, A.F.; Shumov, I.D.; Ilnitskii, M.A.; Miakonkikh, A.V.; Popov, V.P.; Rudenko, K.V.; Glukhov, A.V.; Kupriyanov, I.N.; Ivanova, N.D.; Rogozhin, A.E.; Archakov, A.I.; Ivanov, Y.D. Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection. Biosensors 2018, 8, 72.

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