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Materials 2014, 7(4), 2913-2944;

Emerging Applications for High K Materials in VLSI Technology

TEL Technology Center, America, LLC, NanoFab South 300, 255 Fuller Road, Suite 214, Albany, NY 12203, USA
Received: 27 January 2014 / Revised: 14 March 2014 / Accepted: 24 March 2014 / Published: 10 April 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
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The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing. View Full-Text
Keywords: high K; dielectric; CVD; ALD; contacts; CMOS; DRAM; resistive RAM; diode; patterning high K; dielectric; CVD; ALD; contacts; CMOS; DRAM; resistive RAM; diode; patterning

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Clark, R.D. Emerging Applications for High K Materials in VLSI Technology. Materials 2014, 7, 2913-2944.

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