Next Article in Journal
Transparent Conducting Oxides—An Up-To-Date Overview
Next Article in Special Issue
Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements
Previous Article in Journal
A Gold Nanoparticle and Aflatoxin B1-BSA Conjugates Based Lateral Flow Assay Method for the Analysis of Aflatoxin B1
Previous Article in Special Issue
Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications
Article Menu

Export Article

Open AccessArticle

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

Oerlikon USA, Inc., Business Unit Systems, 970 Lake Carillon Dr, Suite 300, St. Petersburg, FL 33716, USA
OC Oerlikon Balzers AG, Business Unit Systems, Iramali 18, P.O. Box 1000, Balzers LI-9496, Liechtenstein
Author to whom correspondence should be addressed.
Materials 2012, 5(4), 644-660;
Received: 5 January 2012 / Revised: 27 March 2012 / Accepted: 29 March 2012 / Published: 13 April 2012
(This article belongs to the Special Issue High-k Materials and Devices)
PDF [626 KB, uploaded 13 April 2012]


Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2) and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities. View Full-Text
Keywords: thin film capacitors; barium titanate; high-k thin film capacitors; barium titanate; high-k

Figure 1

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Reynolds, G.J.; Kratzer, M.; Dubs, M.; Felzer, H.; Mamazza, R. Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate. Materials 2012, 5, 644-660.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top