Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. Howev...
We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–vo...
While metal adhesion layers are commonly used in the fabrication of field–effect transistors (FETs) based on two-dimensional (2D) materials, the impact of adhesion layer thickness on device performance remains insufficiently explored. In this s...
This paper evaluates the non-uniformity degree of platinum and chromium Schottky contacts on silicon carbide. The forward characteristics of experimental samples were acquired in a wide, 60–500 K, temperature range. Microstructural and conventi...
In this paper, a novel 120 V-class silicon Schottky contact super barrier rectifier with a deep isolated MOS trench in an epitaxial n-drift layer (DOT-SSBR) is studied through experiments, featuring the deep isolated MOS trenches (DOTs) in an epitaxi...
In this paper, we investigated the effects of the processing parameters, such as deposition methods, annealing temperature, and metal thickness, on the electrical characteristics of Ti/4H-SiC contacts. A reduction of the Schottky barrier height from...
Carbon nanotube (CNT)–metal Schottky contacts are widely employed in different types of electronic devices, including field effect transistors (FET) and gas sensors. CNTs are normally considered stable on electronic properties with gas adsorpti...
The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltag...
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barr...
We present a comprehensive study of the structural and electronic properties of a graphene/phosphorene (G/P) heterostructure in the framework of density functional theory, including van der Waals interaction in the exchange–correlation function...
Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate α-Ga2O3 MO...
Constructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field...
ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal–ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration...
Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer....
Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiven...
The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiA...
Contact scaling is a major challenge in nano complementary metal–oxide–semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to t...
This paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors. The employed nanostructured three-dimensional substrates provide larger contact areas and enable...
In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results...
The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN...
Different contact materials and optimization of techniques of their depositions expand the possibilities to obtain high performance room temperature CdTe-based X/γ-ray detectors. The heterostructures with ohmic (MoOx) and Schottky (MoOx, TiOx, TiN, a...
Current-voltage (I-V) characteristics of a recessed-channel reconfigurable field-effect transistor (RC-RFET) is discussed, herein, depending on the variation of temperature (T) to understand the operation mechanisms, in depth. Assuming that RC-RFET c...
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of...
This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key mechanisms contri...
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further induc...
In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism...
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a...
Carbon nanotubes (CNTs) have been directly grown onto a silicon microsystem by a local synthesis method. This method has potential for wafer-level complimentary metal-oxide-semiconductor (CMOS) transistor-compatible integration of CNTs into more com...
The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type...
Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rap...
Meixner’s historical remark in 1969 “... it can be shown that the concept of entropy in the absence of equilibrium is in fact not only questionable but that it cannot even be defined....” is investigated from today’s insight....
Dopamine detection by using N2/O2 annealing in a Pt/Ti/n-Si structure is investigated for the first time. To achieve repeatable and stable dopamine detection, a Pt membrane is annealed at elevated temperatures of 500 to 700 °C. N2/O2 gas ambient...
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the r...
A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k...
Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited by an atomic layer deposition technique for application in next-generation electronics. Individual multilayers with uniform thicknesses are formed for the ATO NLs. Wit...
In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambi...
Nanostructured Schottky barrier gas sensors have emerged as novel semiconductor devices with large surface areas and unique electronic characteristics. Although it is widely known that operating these gas sensors requires heating to an optimal temper...
We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resist...
In the context of increasing digitalization and the emergence of applications such as smart cities, embedded devices are becoming ever more pervasive, mobile, and ubiquitous. Due to increasing concerns around energy efficiency, gate density, and scal...
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a la...
In this study, metal–silicide-based contacts to GaN-cap/AlGaN/AlN-spacer/GaN-on-Si heterostructure were investigated. Planar Schottky diodes with Cu-covered anodes comprising silicide layers of various metal–silicon (M–Si) compositi...
This study demonstrates the fabrication of high-performance p-Cu2O/n-β-Ga2O3 heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu2O spacing to 4 μm, the device achieves a turn-on v...
Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investiga...
Here, we report the successful incorporation of group I elements (K, Na, Li) to ZnO nanowires. Three distinct (2, 4, and 6 wt.%) doping concentrations of group I elements have been used to generate high piezoelectric voltage by employing a vertically...
For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D) materials are a potential replacement for silicon since even atomically thin 2D semiconductors can maintain sizable mobilities and provide enhanced gate control in...
In this work, the electrical properties of the Ga2O3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β-Ga2O3 surface r...
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device application...
In this work, three layers of transparent conductive films of WO3/Ag/WO3 (WAW) were deposited on a glass substrate by radio frequency (RF) magnetron sputtering. The thicknesses of WO3 (around 50~60 nm) and Ag (10~20 nm) films were mainly the changeab...
Deep levels control the space charge in electrically compensated semi-insulating materials. They limit the performance of radiation detectors but their interaction with free carriers can be favorably exploited in these devices to manipulate the spati...
Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applicat...
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