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Open AccessArticle

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

1
Research Center for Materials Analysis, Korea Basic Science Institute, Gwahak-ro 169-148, Yuseong-gu, Daejeon 34133, Korea
2
Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Korea
3
Busan Center, Korea Basic Science Institute, Busan 46742, Korea
4
Department of Materials Science and Engineering, Inha University, 100 Inharo, Michuhol-gu, Incheon 22212, Korea
5
Department of Science Education, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeollabuk-do 303, Korea
6
Analytical Laboratory of Advanced Ferroelectric Crystals, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeollabuk-do 303, Korea
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(2), 297; https://doi.org/10.3390/nano10020297
Received: 31 December 2019 / Revised: 29 January 2020 / Accepted: 3 February 2020 / Published: 10 February 2020
(This article belongs to the Section Nanophotonics: Characterization, Modelling, and Nanodevices)
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.
Keywords: freestanding GaN; HVPE; Schottky diodes; silicon; transport mechanism freestanding GaN; HVPE; Schottky diodes; silicon; transport mechanism
MDPI and ACS Style

Lee, M.; Ahn, C.W.; Vu, T.K.O.; Lee, H.U.; Jeong, Y.; Hahm, M.G.; Kim, E.K.; Park, S. Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN. Nanomaterials 2020, 10, 297.

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